Publication Date:
2012-04-09
Description:
N-type microcrystalline silicon oxide thin films (n-μc-SiOx:H) have been deposited by VHF-PECVD (40 MHz) with reactant gas mixtures of CO2/SiH4 and H2. N-μc-SiOx thin films exhibiting low refractive index value (n600 nm~2), and medium/high conductivity (≧10-9 S/cm) are suitable to be used as an “n-type reflector” in micromorph tandem solar cells. Transmission electron microscopy (TEM) results show that microstructures of n-μc-SiOx:H thin films contain nanocrystalline Si particles, which are randomly embedded in the a-SiOx matrix. This specific microstructure provides n-μc-SiOx:H thin films excellent optoelectronic properties; therefore, n-μc-SiOx:H thin films are appropriate candidates for “n-type reflector” structures in Si tandem solar cells.
Print ISSN:
1110-662X
Electronic ISSN:
1687-529X
Topics:
Electrical Engineering, Measurement and Control Technology
,
Energy, Environment Protection, Nuclear Power Engineering
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