Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 997-999
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland et al., J. Electron. Mater. 25, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V6 and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123453
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