ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
A picosecond excimer laser-plasma source is used to generate average x-ray powers of 1.5 and 0.9 W at 1.4 and 1 nm wavelength, respectively. These wavelengths are required for proximity x-ray lithography in the semiconductor industry. The laser system uses a commercial KrF excimer amplifier for trains of 8 ps laser pulses which are focused to power densities of (approximately-greater-than)1015 W/cm2 on steel and copper tape targets, in atmospheric pressure helium gas. The laser to x-ray energy conversion efficiency is 10.4% at 1.4 nm and 5.4% at 1 nm x-ray wavelength. By using several, larger, commercial, excimer laser amplifiers, the x-ray power output of the laser-plasma source can be scaled up to the tens of watts required by the semiconductor industry. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1147404
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