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  • 1
    Electronic Resource
    Electronic Resource
    Studies of surface recombination velocity at copper/cadmium sulfide (1120) interfaces (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 6842-6847 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100380a055
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  • 2
    Electronic Resource
    Electronic Resource
    Anisotropic domain structure of KTiOPO4 crystals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1950-1954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly anisotropic ferroelectric domain structure is observed in KTiOPO4 (KTP) crystals reversed by low electric field. The applied Miller–Weinreich model for sidewise motion of domain walls indicates that this anisotropy results from the peculiarities of KTP crystal lattice. The domain nuclei of dozen nanometer size, imaged by atomic force microscopy method, demonstrate regular hexagonal forms. The orientation of domain walls of the elementary nuclei coincides with the orientation of the facets of macroscopic KTP crystals. The observed strong domain elongation along one principal crystal axis allows us to improve tailoring of ferroelectric domain engineered structures for nonlinear optical converters. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385575
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  • 3
    Electronic Resource
    Electronic Resource
    Two-dimensional surface band structure of operating light emitting devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 107-113 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of two-dimensional potential distribution with nanometer spatial resolution of operating light emitting diodes. By measuring the contact potential difference between an atomic force microscope tip and the cleaved surface of the light emitting diode, we were able to measure the device surface potential distribution. These measurements enable us to accurately locate the metallurgical junction of the light emitting device, and to measure the dependence of the built-in voltage on applied external bias. As the device is forward biased, the junction built-in voltage decreases up to flat band conditions, and then inverted. It is shown that the potential distribution across the pn junction is governed by self-absorption of the sub-bandgap diode emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370706
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  • 4
    Electronic Resource
    Electronic Resource
    Excess carriers lifetime in InP single crystals: Radiative versus nonradiative recombination (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 430-437 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive and systematic study of the minority and majority carrier lifetimes in InP single crystals doped in the range of 1×1015–4×1018 cm−3. Radiative recombination dominates in undoped InP, because the Shockley–Read–Hall lifetime is very long (〉10 μs). For S or Sn doped n-type InP with intermediate doping concentration, nonradiative recombination is dominant under low injection conditions, hence the effective lifetime increases with increasing the injection level. On the other hand, the effective lifetime decreases with increasing the injection level under high excitation conditions due to radiative recombination. Thus, the effective lifetime has the largest value (140 ns for S-doped InP with majority carrier concentration n0=2×1017 cm−3, and 110 ns for Sn-doped InP with n0=3×1017 cm−3) for an injection level of around 1×1017 cm−3. Such information is important for the design of devices that operate under high injection levels like lasers and concentrated solar cells. In p-InP, nonradiative recombination and trapping dominate even in low doped samples and the effective lifetimes are much shorter than in n-InP. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370748
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  • 5
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6902-6907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photovoltage (PV) response of single quantum well p-i-n structures under open circuit conditions has been studied experimentally and numerically. The numerical calculations show a monotonic increase in the PV response with decreasing well width, implying that the ensuing increase in carrier generation rate and band gap governs the PV response. The well layer has been shown to dominate the recombination of excess carriers generated throughout the structure, and their lifetime at the well has been found to be a critical structure parameter. Using a simple semi-empirical model, the effective carrier lifetimes at the well layer/interfaces for the different samples were estimated. The results demonstrate the benefits of using surface photovoltage spectroscopy for characterization and quality control of quantum well structures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371770
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  • 6
    Electronic Resource
    Electronic Resource
    Microsphere electron multiplier applicability to picosecond time correlated single photon counting (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2911-2912 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electron transit-time spreads (TTS) measurements in the new microsphere plate electron multiplier is reported on. TTS's of 120 and 150 ps were measured for a 0.7- and 1.4-mm-thick plates, respectively. The results are compared and discussed with regard to the widely used microchannel-plate multipliers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148218
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  • 7
    Electronic Resource
    Electronic Resource
    Super band-gap time-resolved luminescence study of degenerate electron–hole plasma in thin GaAs epilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5129-5137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Super band-gap time-resolved photoluminescence is employed to measure the transport properties of degenerate electron–hole gas in thin GaAs epilayers. It is found that the luminescence decay at wavelengths shorter then the energy gap wavelength is much faster then expected from a simple diffusion–reabsorption model. The results are explained by using a transport model based on Fermi–Dirac carrier statistics and nonparabolic band structure. We have found that only by introducing the above two phenomena the photoluminescence spectra at all energies can be fitted. The importance of the results in studies of hot carrier energy loss rates is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363494
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of electric fields on time-resolved photoluminescence spectra in semiconductors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4255-4257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a rigorous analysis of the effects of electric fields on time-resolved photoluminescence in semiconductors. The results show that the effect of the field alone on the photoluminescence decay can be distinguished from that of field-enhanced surface recombination if the carrier injection levels, the surface recombination velocity at zero field, and the band bending in the dark are within certain limits. When these experimental conditions are met it is possible to extract the recombination and/or transfer velocity of free carriers in the presence of electric fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355964
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  • 9
    Electronic Resource
    Electronic Resource
    Metal reactivity effects on the surface recombination velocity at InP interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2552-2554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct measurements of the surface recombination velocity (SRV) on etched InP(110) and at its interfaces with various metals deposited by thermal evaporation have been performed using ultrafast time-resolved photoluminescence. The results show that the original InP low SRV is retained when these surfaces are coverd with metals which tend to react with the semiconductor's anion, such as Al, Cr, and Zn. On the other hand, the SRV increases sharply as a function of unreactive metal coverage, such as Cu, Au, and Ag. The SRV results are explained in terms of metal-induced interface states, whose position in the band gap and thus their cross section for recombination depends on the metal reactivity. The similarity of the SRV and the reported Schottky barrier height dependence on the metal-phosphorus heat of reaction is noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103814
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of reactive versus unreactive metals on the surface recombination velocity at CdS and CdSe(112¯0) interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 458-460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct measurements of the surface recombination velocity (SRV) on etched CdS(112¯0), CdSe(112¯0) and at their interfaces with various metal ions and metals (deposited by electrolyte aqueous solutions and in situ thermal evaporation, respectively) have been performed using ultrafast time-resolved photoluminescence (PL). Correlations with interface states types and energy positions have been found based on surface photovoltage spectroscopy (SPS). The results show that the original semiconductor SRV is retained, and in some cases even decreases, when these surfaces are covered with metals, which tend to react with the semiconductor's anion, such as Al, Ti, and Zn. On the other hand, the SRV increases sharply as a function of unreactive metals coverage, such as Cu, Au, etc. The PL results are explained in terms of metal-induced recombination centers at the semiconductor interface, which are introduced or eliminated as observed by SPS.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103665
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