Publication Date:
2011-08-19
Description:
A directionally solidified PbCl2 material was prepared and analyzed and subsequently used to grow single crystals. It was found that silicon, halogens, sulfur, magnesium, and phosphorus were the hardest impurities to remove by the single-pass directional freezing. Single crystals grown from the purified material displayed good scattering beam quality and showed no absorption peaks between 0.30 to 20 microns. Direct photographic observations of the solid-liquid interface at several G/V (denoting the temperature gradient and the translation velocity, respectively) ratio values showed that, as the G/V ratio decreased, the interface varied from a smooth convex surface to dendritic.
Keywords:
MATERIALS PROCESSING
Type:
Journal of Crystal Growth (ISSN 0022-0248); 89; 1, Ju
Format:
text
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