Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 2283-2285
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The structure of GaN films grown by hydride vapor phase epitaxy on sapphire substrates has been studied by x-ray diffraction, transmission electron microscopy (TEM), and atomic force microscopy. Films, 15–80 μm thick, were grown on c-plane sapphire that were either pretreated with GaCl or contained a ZnO sputter deposited layer. The defect density, for both types of films, was found by plan view TEM to range between mid-107 to mid-108 dislocations/cm2 despite very different structural defects at the film/substrate interface. Nanovoids were found; however, no cracks were observed in the films that were investigated by TEM. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120051
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