Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3557-3559
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polymer diodes made using a bilayer of doped poly(3,4-ethylenedioxythiophene) and a semiconducting polymer in a sandwich structure with two low-work-function metals are reported. The conducting polymer layer acted as a modifier of the injection properties of the low-work-function metal, allowing easy hole injection. Upon insertion of the conducting polymer layer, the contact-limited current flow became bulk limited. With this anode, the fabrication of diodes with a rectification ratio of seven orders of magnitude was possible. We present patterned microdiodes made with crossing of 10 μm lines, showing similar performance as the mm-size diode. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125387
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