ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated inthe presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent isobserved and correlated with the presence of the oxide and with the charge traps at thesemiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced thatinterface charge accumulation is optically promoted. Rise and fall photo-current measurementsprovided the time parameter of the trapping phenomenon
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1215.pdf
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