ISSN:
1057-9257
Keywords:
MOCVD
;
aluminium nitride
;
gallium nitride
;
epitaxy
;
alternative precursors
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Two alternative precursor systems have been investigated for the growth of AlN and GaN by MOCVD. The first involved the reaction between Me3M (M(DOUBLE BOND)Al, Ga) and tert-butylamine (tBuNH2), whilst the second route involved the pyrolysis of single-source precursors such as Me3M(NH3) (M(DOUBLE BOND)Al, Ga) and [Me2Ga(NH2)]3. Both routes proved suitable for the deposition of AlN thin films, and epitaxial AlN layers have been deposited on sapphire (0001) from Me3Al(NH3) without any added NH3. Attempts to grow GaN from Me3Ga/tBuNH2 mixtures or Me3Ga(NH3) were unsuccessful, leading to the deposition of Ga droplets, although GaN films containing a large excess of Ga were deposited by low-pressure MOCVD from the single-source precursor [Me2Ga(NH2)]3.
Additional Material:
1 Ill.
Type of Medium:
Electronic Resource
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