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  • 1
    Series available for loan
    Series available for loan
    Berlin : Akad.-Verl.
    Associated volumes
    Call number: SR 99.0015(112)
    In: Freiberger Forschungshefte
    Type of Medium: Series available for loan
    Pages: 32 S.
    Series Statement: Freiberger Forschungshefte : C 112 : Geophysik
    Language: German
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7218-7226 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of quantitative analysis of fluorescence x-ray absorption fine structure (XAFS) experiments at the Fe–K absorption edge are presented for a 6*(4.3 nm Fe/10.4 nm Al) multilayer prepared by pulsed laser deposition. Fluorescence XAFS experiments have been combined with excitation of x-ray standing waves. This combination in one experiment allowed for a depth-controlled excitation of Fe fluorescence and hence for a depth-resolved analysis of short-range order. Depth-resolved analysis showed that instead of sharp Fe/Al or Al/Fe interfaces extended interlayer regions exist. The structure retained that of bulk α-Fe. In the upper half of the Fe layer 37 at. % Al as nearest and next nearest neighbors of Fe were found, whereas in the lower half 80 at. % Al atoms occur. Thus the Fe/Al interface (deposition of Fe on Al) should be characterized by an intermixing zone significantly larger in comparison to that of the Al/Fe interface (deposition of Al on Fe). By conventional XAFS measurement carried out at a fixed angle of incidence of the exciting beam an average Fe neighborhood for the entire Fe layer of 58 at. % Al atoms was found. This value agrees with the average obtained when the analysis of the layer was performed separately for two sublayers by shifting the wave field through the layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 32 (1999), S. 854-858 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Energy-dispersive anomalous X-ray scattering has been used for the determination of the polarity of a noncentrosymmetric layer/substrate system. The method was applied to an epitaxically grown (Ga,In)P layer on a (001) GaAs substrate as an example to show its applicability as a routine procedure for noncentrosymmetric thin-film systems. In the simplest case, four energy spectra of various orders of the 111 reflections were sufficient to identify polarity, without the need for intensity corrections.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 1275-1281 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Diffraction anomalous fine structure (DAFS) experiments were applied to an epitaxially grown (Ga,In)P layer on a [001] GaAs substrate as a single-crystalline model substance. The requirements for the reliable measurement of reflection intensities as a function of photon energy, as well as the quantitative DAFS analysis resulting in the complex-valued fine-structure function of the scattering factor, are described. In the case of single crystals, effort had to be put into performing the DAFS measurements in order to hold the position of the Bragg reflection exactly during the energy scan. Using the zinc-blende-type structure as an example, it is shown for the first time that, similar to single-crystal structure analysis, the lack of inversion symmetry has a significant impact on the DAFS signal, so that DAFS may contribute to structure analysis as well.
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  • 6
    ISSN: 1436-5073
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Summary For determination of the crystallographic orientation, of the lattice parameters and of the crystal structure of micro areas of the material surface, a series of radiographic and electronographic techniques are available. Comparison of their effectiveness shows that they are subject to great limitations with regard to their possibilities of application. For this reason, radiographic microdiffraction techniques were developed, of which two were presented. For investigation of selected crystallites in compact samples, the rotatory swivel technique is suitable. In this technique, the intersection lines of the diffraction cones belonging to the network plane systems can be represented with high contrast on a film. The geometry of these diffraction figures was explained and the determination of the crystallographic orientation and of the lattice parameters illustrated by the example of silicone and alpha-iron. For investigation of micro areas of polycrystalline materials, an X-ray microdiffractometer with annular proportional counting tube was used which registers in one go the intensity contained in one Debye-Scherrer ring. With this arrangement, the course of the mechanical tension in front of a cracked tip and the edge of the crack was determined qualitatively.
    Notes: Zusammenfassung Zur Bestimmung der kristallographischen Orientierung, der Gitterparameter und der Kristallstruktur von Mikrobereichen der Werkstoffoberfläche stehen eine Reihe von röntgenographischen und elek-tronographischen Verfahren zur Verfügung. Eine Gegenüberstellung ihrer Leistungsfähigkeit zeigt, daß sie hinsichtlich ihrer Einsatzmöglichkeiten größeren Einschränkungen unterworfen sind. Deshalb wurden neue röntgenographische Mikrobeugungsverfahren entwikkelt, von denen zwei vorgestellt wurden. Zur Untersuchung ausgewählter Kristallite in kompakten Proben ist das Drehschwenkverfahren geeignet, bei dem durch parallele monochromatische Röntgenstrahlung die Schnittlinien der zu den Netzebenenscharen gehörenden Beugungskegel auf einem Film kontrastreich abgebildet werden. Die Geometrie dieser Beugungsfiguren wurde erklärt und die Bestimmung der kristallographischen Orientierung und der Gitterparameter am Beispiel von Si und α-Fe erläutert. Zur Untersuchung von Mikrobereichen polykristalliner Werkstoffe wird ein Röntgenmikrodiffraktometer mit ringförmigem Proportionalzählrohr verwendet, das die in einem Debye-Scherrer-Ring enthaltene Intensität auf einmal registriert. Mit dieser Anordnung wurde der Verlauf der mechanischen Spannung vor einer Rißspitze und an den Rißufern quantitativ ermittelt.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 3 (1974), S. 205-212 
    ISSN: 1432-0630
    Keywords: Solid-state lasers ; Transient heat flow
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analog circuit is presented for the determination of the transient thermal profile in optically pumped laser rods. The model can be used to simulate the behavior of solid and hollow cylindrical rods under single shot and repetition rate conditions. The design of a particular circuit is given as well as experimental results.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 8 (2001), S. 319-321 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Approaches for software based digital signal processing and numerical deconvolution of measured signals which overcome limitations of state-of-the-art systems are described. The basic technical equipment for digital signal processing consists of an energy resolving detector with a preamplifier followed by a fast sampling analogue-to-digital converter (ADC). The main idea is the numerical decomposition of the measured signal into contributions caused by single photon absorption using standard pulses. The latter can be obtained by measurements under definite conditions. The maximum pulse rate is then limited only by the ratio of sampling time to the time between two pulses which should be attributed to single events. Thus pulse overlaps do not require pulse rejection. At sampling rates of 108 samples per second theoretically a comparable photon rate can be detected at throughputs of 100%. Beyond that it is outlined that in a comparable manner a numerical deconvolution of measured energy spectra (statistic distribution functions of single events) into combinations of standard spectra, which can likewise be determined by measurement, offers outstanding possibilities, too. On the one hand the energy resolution attainable for individual events for a given detector can be improved drastically by the statistical treatment of spectra. On the other hand an energy resolving work principle becomes possible for certain detectors, which do not permit this conventionally due to their poor signal to noise ratio.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 611 (1992), S. 158-164 
    ISSN: 0044-2313
    Keywords: Oxo-sulfato-vanadates(V) ; syntheses ; crystal structures ; Raman spectra ; Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Preparation, Raman Spectra, and Crystal Structures of V2O3(SO4)2, K[VO(SO4)2], and NH4[VO(SO4)2]The oxo-sulfato-vanadates(V) V2O3(SO4)2, K[VO(SO4)2], and NH4[VO(SO4)2] have been prepared as crystals suitable for X-ray structure determination. In all structures sulfate acts as an unidentate ligand only toward a single vanadium atom. The structure of V2O3(SO4)2 consists of a threedimensional network of pairs of cornershared VO6 octahedra with one terminal oxygen atom each, and SO4 tetrahedra. All oxygen atoms of the sulfate ions are coordinated. NH4[VO(SO4)2] and K[VO(SO4)2] are isostructural. VO6 octahedra with one terminal oxygen atom and pairs of sulfate tetrahedra form infinite chains by corner sharing. The chains are weakly interlinked to layers. The sulfate ions are distorted towards planar SO3 molecules and single oxygen atoms attached to vanadium. This structural detail gives an explanation for the mechanism of the reversible reaction K[VO(SO4)2] ⇄ K[VO2(SO4)] + SO3 at 400°C. Raman spectra of the compounds have been recorded and interpreted with respect to their structures.Crystal data: V2O3(SO4)2, monoclinic, space group P21/a, a = 947.2(4), b = 891.3(3), c= 989.1(4) pm, β = 104.56(3)°, Z = 4, 878 unique data, R(Rw) = 0.039(0,033); K[VO(SO4)2], orthorhombic, space group P212121, a = 495.3(2), b = 869.6(9), c = 1 627(1)pm, Z = 4, 642 unique data, R(Rw) = 0,11(0,10); NH4[VO(SO4)2], orthorhombic, space group P212121, a = 495.3(1), b = 870.0(2), c = 1 676.7(4)pm, Z = 4, 768 unique data, R(Rw) = 0.088(0.083).
    Notes: Die Oxo-sulfato-vanadate(V)V2O3(SO4)4, K[VO(SO4)2] und NH4[VO(SO4)2] wurden dargestellt und ihre Strukturen röntgenographisch ermittelt. Die Struktur von V2O3(SO4)2 besteht aus einem dreidimensionalen Netzwerk von SO4-Tetraedern und Paaren eckenverknüpfter VO6-Oktaeder. Die Sauerstoffatome der Sulfationen sind an vier verschiedene Vanadinatome koordiniert. K[VO(SO4)2] und NH4[VO(SO4)2] sind isostrukturell. VO6-Oktaeder, mit einem endständigen Sauerstoffatom, und Paare von SO4-Tetraedern sind über Ecken zu Ketten verknüpft. Diese bilden über weitere gemeinsame Ecken Schichten. Die Sulfationen sind in Richtung planarer SO3- Moleküle und eines Sauerstoffatoms, das an Vanadium gebunden ist, verzerrt. Dies gibt eine Erklärung für den Mechanismus der bei 400°C reversiblen Reaktion K[VO(SO4)2] ⇄ K[VO2(SO4)] + SO3. Die Ramanspektren der genannten Verbindungen wurden gemessen und zugeordnet.Kristalldaten: V2O3(SO4)2, monoklin, Raumgruppe P21/a, a = 947,2(4), b = 891,3(3), c = 989,1(4)pm, β = 104,56(3)°, Z = 4, 878 unabhängige Reflexe, R(Rw) = 0,039(0,033); K[VO(SO4)2], orthorhombisch, Raumgruppe P212121, a = 495,3(2), b = 869,6(9), c = 1627(1) pm, Z = 4, 642 unabhängige Reflexe, R(RW) = 0,11(0,10); NH4[VO(SO4)2], orthorhombisch, Raumgruppe P212121, a = 495,3(1), b = 870,0(2), c = 1676,7(4) pm, Z = 4, 768 unabhängige Reflexe, R(Rw) = 0, 088(0,083).
    Additional Material: 5 Ill.
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  • 10
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