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  • 1
    Electronic Resource
    Electronic Resource
    The effectiveness of electron holography, microscopy, and energy-loss spectroscopy in characterizing thin silicon oxide-nitride-oxide structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1750-1760 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy, electron holography, and high-spatial- resolution (19 A(ring)) computer-controlled parallel electron-energy-loss spectrometry (PEELS) were used to probe the structure of and chemical profile across two thin silicon oxide-nitride-oxide layered structures of nominal widths of 10 A(ring)-50 A(ring)-10 A(ring) and 30 A(ring)-50 A(ring)-30 A(ring). It was found that the individual layers of the stacked structures could be clearly imaged using electron holography, but not with electron microscopy due to the behavior of the microscope transfer function and the shape of the potential profile of the structure. Holography revealed that the layers of the 10 A(ring)-50 A(ring)-10 A(ring) system were in fact 14 A(ring)-28 A(ring)-18 A(ring)±5 A(ring), and the oxide layer in contact with the substrate (first oxide layer) was discontinuous. PEELS showed that the second oxide layer contained nitrogen, and the nitride layer had a silicon-to-nitrogen concentration ratio of 1.0±0.1. The 30 A(ring)-50 A(ring)-30 A(ring) system was in fact 30 A(ring)-20 A(ring)-40 A(ring)-15 A(ring)±5 A(ring). The second oxide layer was SiO1.6±0.2, and nitrogen was found near the film surface which made the structure appear to be four layers. These results show the power of holography in characterizing thin, light-element, amorphous layers and the importance of computer-controlled parallel energy-loss line scans for obtaining analytical information at the highest spatial resolution with minimum dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353210
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructure of cubic boron nitride thin films grown by ion-assisted pulsed laser deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 295-303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microstructural study of boron nitride films grown by ion-assisted pulsed laser deposition is presented. Fourier transform infrared spectroscopy, electron-energy-loss spectroscopy, and electron-diffraction measurements indicate that within the ion-irradiated region on the substrate, the film consists of a high fraction of the cubic phase (cBN) with a small amount of the turbostratic phase; outside the irradiated region, only the turbostratic phase is detected. Conventional and high-resolution electron microscopic observations show that the cBN is in the form of twinned crystallites, up to 40 nm in diameter. Particulates, formed by the laser ablation process, reduce the yield of cBN in the irradiated regions by shadowing local areas from the ion beam. The films exhibit a layered structure with an approximately 30-nm-thick layer of oriented turbostratic material forming initially at the silicon substrate followed by the cBN. The observations of oriented turbostratic material and twinned cBN crystallites are discussed in relation to a previously proposed compressive stress-induced mechanism for cBN synthesis by ion-assisted film deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357143
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  • 3
    Electronic Resource
    Electronic Resource
    Structural variations in individual carbonaceous particles from an urban aerosol (1992)
    s.l. : American Chemical Society
    Environmental science & technology 26 (1992), S. 1967-1976 
    Details
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/es00034a014
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of energy deposition in transmission electron microscopy
    Amsterdam : Elsevier
    Ultramicroscopy 35 (1991), S. 65-69 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(91)90046-9
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  • 5
    Electronic Resource
    Electronic Resource
    A comparison of theoretical and experimental L and M cross sections
    Amsterdam : Elsevier
    Ultramicroscopy 30 (1989), S. 365-370 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(89)90067-3
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  • 6
    Electronic Resource
    Electronic Resource
    Virtual inelastic scattering in high-energy electron diffraction (1978)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 34 (1978), S. 48-51 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: By the use of convergent-beam and critical-voltage measurements it has become possible to measure the crystal potential to an accuracy of about 10-3. The possibility that the contribution from virtual inelastic scattering is greater than the errors in these experiments is examined and it is shown that only virtual scattering from single-electron excitations need be considered. Estimates are given for the Fourier coefficients of the virtual inelastic scattering potential for silicon, copper and germanium and these are compared with the errors in the critical-voltage experiments of Hewat & Humphreys [High Voltage Electron Microscopy (1974), edited by P. R. Swann, C. J. Humphreys & M. J. Goringe, pp. 52-56. London and New York: Academic Press]. It is concluded that the virtual inelastic scattering contribution is less than the experimental errors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0567739478000091
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  • 7
    Electronic Resource
    Electronic Resource
    Crystallographic site-occupancy refinements in thin-film oxides by channelling-enhanced microanalysis (1985)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 41 (1985), S. 396-405 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768185002361
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  • 8
    Electronic Resource
    Electronic Resource
    Analytic properties of the contrast transfer function in high-resolution electron microscopy (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 946-953 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: To calculate high-resolution images it is necessary to convolute the wavefunction generated by scattering from the specimen with the microscope objective-lens wavefront aberration function. This is usually done by a multiplication of the transfer function and the specimen exit-surface wavefunction in reciprocal space followed by a numerical integration over all scattering wave vectors. Examination of the analytic behaviour of the wave-front aberration function in the complex plane shows that, for simple scattering functions, it is possible to perform the integral analytically using the method of stationary phase. Analytic results for the imaging of disordered planes of atoms are compared with fast Fourier transform calculations as a function of defocus. The limitations of stationary-phase integration are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388006695
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  • 9
    Electronic Resource
    Electronic Resource
    Dirac–Fock calculations of X-ray scattering factors and contributions to the mean inner potential for electron scattering (1994)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 50 (1994), S. 481-497 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Tables of X-ray scattering factors for naturally occurring elements and ions have been calculated using a multiconfiguration Dirac–Fock code. The complete data set takes up about 250 kbytes of space. For accurate values, it is preferable to interpolate directly. For consistency with previous work, parametric fits are also presented with error estimates and a range of validity. The limiting values of the electron scattering factor as sinθ/λ tends to zero, which are needed to calculate the mean inner potential for electron scattering, are also tabulated. The results show that the mean inner potential can be very sensitive to ionization state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767393013200
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  • 10
    Electronic Resource
    Electronic Resource
    A matrix-operator approach to reflection high-energy electron diffraction theory (1995)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 38-47 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The amplitudes of beams reflected from a crystal surface by high-energy electrons are expressed in terms of matrix operators based on Bloch waves. The solution is derived in terms of the limiting case of an infinite slab and is therefore applicable to cases involving overlayers of different composition and structure. The possibility of using a kinematical theory and its relationship to the full dynamical treatment are investigated. Calculations show that the method is limited by numerical problems but that it can be used to give a qualitative description of features in reflection high-energy electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767394006720
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