ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract A low-frequency band is observed along with an exciton band in photoluminescence spectra of short-period GaAs/AlAs superlattices doped with Si in the barriers or in the barriers and wells. This band is ascribed to donor-acceptor recombination on the basis of the dependence of its frequency on the excitation intensity under cw excitation and on the time delay under pulsed excitation. Mainly type-II superlattices are investigated. The estimate E A+E D≈120 meV can be obtained from the peak energy of the donor-acceptor band with a very weak excitation intensity. The estimates E A≈23 meV and E D≈90 meV are obtained from the temperature dependence of the band intensity. It is suggested that the deep donor level is associated with a DX center in the AlAs layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187497
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