ISSN:
1436-5073
Keywords:
Key words: Atomic force microscopy (AFM); atomic layer epitaxy (ALE); cross-sectional AFM (X-AFM); heteroepitaxy; gas sensor; tin dioxide.
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract. ALE-grown, rutile-type SnO2 thin films and gas sensor structures based thereupon were studied by AFM with main emphasis on cross-sectional investigations (X-AFM). On glass substrates the polycrystalline films showed a preferred orientation which depended on the film thickness and growth temperature while on single crystal sapphire ( ) the growth was heteroepitaxial. For the X-AFM studies various sample preparation techniques were investigated but only ion beam etching gave satisfactory results and revealed substructures in the sensor structure consisting of Pt and SnO2 layers on a silicon substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s006040070080
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