Publication Date:
2015-05-09
Description:
We investigate the effect of slight Ti substitution (≤0.5%) for Cr in CuCr 1− x Ti x O 2 by measuring the structural, magnetic, and electrical transport properties. Upon Ti doping, the antiferromagnetic transition becomes blurred without a change in Néel temperature. Ti 4+ substituting to Cr 3+ site is found to significantly enhance the resistivity due to the diminishing conducting holes. We find strong time-dependent electrical transport behavior in CuCr 1− x Ti x O 2 induced by slight Ti doping. The key observation is that a metastable behavior occurs in Ti-doped CuCr 1− x Ti x O 2 . A strong resistive relaxation (RR) behavior occurs in Ti-doped CuCr 1− x Ti x O 2 with its magnitude remarkably increasing with increasing Ti content, while it is absent in undoped CuCrO 2 . The RR is found to be described by the combination of an exponential function and a logarithmic dependence at long time. The relaxation behavior in CuCr 1− x Ti x O 2 is found to show a correlation with the local lattice deformation.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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