ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report here the growth by pulsed laser deposition and characterization of metastable disordered Ti1−xGaxN alloy thin films on Al2O3(0001) substrates. X-ray diffraction and x-ray-absorption fine-structure analyses showed that the films contained a single rocksaltlike atomic structure for 0≤ x〈0.45, a single wurtzite-like structure for 0.75≤x≤1, and a mixture of both structures for 0.45≤x〈0.75. Over most of the composition range, the alloy films were predominantly amorphous with some fraction of nanocrystalline material present. Electrical conductivity measurements showed that the structural transition near x(approximate)0.5 is accompanied by a metal–insulator transition. This study provides an increased understanding of the TiN–GaN pseudobinary phase field, which has potential technological implications for metallic contacts to GaN devices. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367877
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