ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the siliconprecursor source together with ethylene as the carbon precursor source. A higher C/Si ratio isnecessary compared with the silane/ethylene system. This ratio has to be reduced especially athigher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the processthat uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS(trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine,that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then toreach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughnessand the crystal quality are very promising
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.179.pdf
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