Publication Date:
2018-03-27
Description:
Author(s): K. Saeedi, N. Stavrias, B. Redlich, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, and B. N. Murdin We present time-resolved measurements of the relaxation between the orbital states of the shallow acceptor boron in silicon. The silicon host was enriched Si 28 , which exhibits lifetime broadened absorption lines. We observed a wide range of T 1 lifetimes from 6 ps to 130 ps depending on the excited s... [Phys. Rev. B 97, 125205] Published Mon Mar 26, 2018
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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