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  • 1
    Electronic Resource
    Electronic Resource
    Recombination properties of photogenerated minority carriers in polycrystalline silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3683-3688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental investigation of the influence of grain boundaries on the recombination of photogenerated minority carriers in polysilicon is reported here. Spatial dependence of photoconductance across an isolated grain boundary was utilized to evaluate the diffusion length of electrons in the grain and the interfacial recombination velocity. Intensity dependence of these parameters provided some insight into the modulation of the grain boundary potential barrier under illumination. Photoconductance was found to vary with photon flux as Gr, where r=1.0 in regions of the grain far away from the boundary and r=0.4 at the grain boundary plane. The barrier height and electron capture cross section in the grain boundary traps were obtained to be 0.12 eV and 1.16 × 10−16 cm2, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349217
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Ni substitution on the magnetic and electrical properties of Dy0.73Tb0.27Fe2 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4589-4594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Alloys of Dy0.73Tb0.27Fe2−xNix [0≤x≤2] were prepared and the lattice parameters obtained at room temperature showed a deviation from Vegard's law owing to the presence of magnetovolume effect. Magnetization studies were carried out up to an applied field of 10 kOe in the temperature range 4.2–750 K. Magnetization data at 4.2 K indicate the effect of domain wall pinning. Temperature dependence of magnetization curves showed maxima at low temperatures as a consequence of this pinning effect. Electrical resistivity studies were carried out in the temperature range 16–750 K. A minimum observed for x=2 in the vicinity of its Curie temperature is attributed to the presence of critical fluctuations due to short-range spin ordering of the rare earths. All the samples, except x=2, showed a T2 dependence at low temperatures and this has been attributed to electron-spin wave scattering mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359423
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  • 3
    Electronic Resource
    Electronic Resource
    Self-diffusion in indium antimonide (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4984-4989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present paper indium and antimony self-diffusion was studied in the temperature range 400–500 °C in single crystals of indium antimonide. The crystals were grown by the Bridgman technique. The radioactive tracer diffusion method was employed using In114m and Sb125 isotopes. Anodic oxidation technique was developed and used for serial sectioning. The penetration profiles were fitted to the error function solution of diffusion equations. For indium self-diffusion, the activation energy and pre-exponential factor were found to be 1.45 eV and 6.0×10−7 cm2/s, respectively, while for antimony diffusion the activation energy was obtained as 1.91 eV with a pre-exponential factor of 5.35×10−4 cm2/s. The results were compared with the earlier experimental studies and theoretical calculations. The migration enthalpies of indium and antimony atoms are estimated to be 0.66 and 0.70 eV, respectively. The corresponding formation enthalpies are 0.79 eV for In vacancy and 1.21 eV for Sb vacancy formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355789
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  • 4
    Electronic Resource
    Electronic Resource
    Patterned tungsten chemical vapor deposition on amorphous silicon by excimer laser modification of the native oxide (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2322-2324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a method of patterning tungsten on hydrogenated amorphous silicon by excimer laser modification of the native oxide, thereby inhibiting the deposition of tungsten on the exposed regions in a subsequent tungsten chemical vapor deposition step. The method demonstrates how intermediate fluence radiation (∼100 mJ/cm2), which does not damage masks, can be utilized for patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102931
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  • 5
    Electronic Resource
    Electronic Resource
    Te substitution in disordered dilute Se1−xTex alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2426-2428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoacoustic absorption measurements at room temperature are reported for Se1−xTex alloys in both crystalline and amorphous states for 0〈x≤0.3. The optical energy gap thus measured shows two features: (a) the gap decreases linearly as x increases with a change of slope at x=0.1 for both crystalline and amorphous alloys; and (b) the difference in the gaps corresponding to the amorphous and crystalline phase remains remarkably constant over the entire range of x(0–0.3) studied here. We attribute the result (a) to the onset of "quantum percolation" at x=0.1, and deduce from (b) that introduction of Te apparently does not affect the structural disorder. The results are argued to yield vital information about the restrictive nature of Te substitution into host Se. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122470
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling and simulation of an ammonia synthesis loop (1982)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 21 (1982), S. 359-367 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i200018a001
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic and electrical studies on Ho0.85Tb0.15Fe2−xNix system (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5112-5116 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cubic Laves phase alloys of Ho0.85Tb0.15Fe2−xNix (0≤x≤2) were prepared and the lattice parameters, evaluated as a function of x at room temperature, show deviation from Vegard's law. This was attributed to the presence of a magnetovolume effect and charge transfer. Magnetization measurements were performed in the temperature range 77–700 K. The results suggest that the system undergoes a gradual transition from ferri- to ferromagnetic with increasing x. This has been explained based on the 3d band model. Furthermore, a monotonic decrease in Curie temperature with x was observed. Electrical resistivity studies were carried out in the temperature range 16–700 K. An anomaly was found in the vicinity of the Curie temperature for x=2 which has been attributed to the existence of the long-range nature of the critical fluctuations due to short-range spin ordering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355287
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  • 8
    Electronic Resource
    Electronic Resource
    Moderate-power cw chemical oxygen-iodine laser capable of long duration operation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 115-118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Design and operation of a cw, transverse-flow oxygen-iodine chemical laser are reported. Reactant recirculation in the O2(1Δ) chemical generator allows long duration (up to 2 h) operation. Peak powers of 460 W, and stable outputs of 80 W have been demonstrated. Power extraction efficiencies of up to 65% were measured for 80-W operation, and the implications of this observation for the I2 dissociation mechanism are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336293
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  • 9
    Electronic Resource
    Electronic Resource
    Overtone vibrational photochemistry of quadricyclane (1988)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 656-660 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100314a018
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  • 10
    Electronic Resource
    Electronic Resource
    Vapor-Liquid Equilibrium Relationship for Ammonia in Presence of Other Gases (1980)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 19 (1980), S. 580-586 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260076a013
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