ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6708-6714 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sintered (1475 °C/2 h) pellets of Ba(Zn1/3Ta2/3)O3 were annealed at temperatures ranging from 1550 to 1625 °C/15 h and subsequently quenched into water. The degree of B-site order between the Zn and Ta cations was investigated using x-ray diffraction (XRD) and transmission electron microscopy (TEM). Samples quenched from 1575 to 1600 °C exhibit the highest degree of order by XRD. Dark-field TEM images from these samples revealed 1:2, Zn:Ta, trigonal, ordered domains approximately 0.4 μm diam near grain boundaries but 100 nm in the grain interior. Samples annealed and quenched from 1625 °C exhibited no ordered superlattice reflections by XRD. However, diffuse scatter along 〈111〉 directions and fcc rather than trigonal ordered reflections were observed in electron diffraction patterns. Disordered samples were subsequently annealed at 1500 °C/15 h (below the order–disorder phase transition ∼1625 °C) and ±〈fraction SHAPE="CASE"〉13{hkl} superlattice reflections reappeared in XRD patterns demonstrating the reversibility of the phase transition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2086-2092 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex perovskite A(B'B‘)O3 ceramics with various degrees of B-site order have been structurally and spectroscopically characterized by means of x-ray diffraction, transmission electron microscopy, and infrared reflectivity. In Ba(Fe1/2Nb1/2)O3 and Pb(Fe1/2Nb1/2)O3, no order could be detected whereas Pb(In1/2Nb1/2)O3, Pb(Mg1/3Nb2/3)O3, and Pb(Sc1/2Ta1/2)O3 (unannealed) all exhibited weak reflections associated with small ordered regions Pb(Sc1/2Ta1/2)O3 was also prepared by appropriate heat treatment in the fully ordered form and exhibited strong maxima arising from the ordered superlattice in both electron and x-ray diffraction. The infrared reflectivity (30–4000 cm−1) revealed correlation between the degree of ordering and appearance of the extra mode in the 260–320 cm−1 range assigned to B'–B‘ vibrations. Despite an apparently low volume fraction of "ordered material'' in "partially ordered'' samples of Pb(Sc1/2Ta1/2)O3, the extra mode was observable. It is suggested that infrared spectroscopy is sensitive to short-range ordering down to the nm range which is proposed to exist in between the small regions of order.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1671-1676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, it has been shown that, upon cooling, disordered Pb(Sc1/2Ta1/2)O3 ceramics transform spontaneously from a relaxor state to a ferroelectric state when processed in a manner that suppresses lead vacancies. If lead vacancies are present, the spontaneous ferroelectric transition is suppressed and the ceramics exhibit the usual relaxor behavior in a wide temperature range. It is shown that disordered Pb(Sc1/2Nb1/2)O3 ceramics have a similar nature: When produced in a manner that does not eliminate lead vacancies, they exhibit normal relaxor behavior. However, if stoichiometry is tightly controlled, disordered Pb(Sc1/2Nb1/2)O3 transforms spontaneously (under zero-bias field) from a relaxor into a normal ferroelectric upon cooling. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5864-5873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The goal of this work was to understand the correlation between microscopic material parameters and the dielectric function of candidate materials for applications in the microwave frequency range. The structure and dielectric properties of Ba2+(Y3+1/2Ta5+1/2)O3 (BYT), a typical representative of the Ba(B3+1/2B5+1/2)O3 complex perovskite family, has been investigated from 102 to 1014 Hz and from 20 to 600 K. At Tc=253±1 K, BYT undergoes an equitranslational improper ferroelastic, second-order phase transition, characterized by the tilting of the oxygen octahedra. The space group symmetry changes from Fm3¯m, in the high temperature phase, to I4/m below Tc. The existence of an intermediate temperature region (Tc−40〈T〈Tc) has been observed, where the compound exhibits structural and dielectric properties different from those in the well-defined high (T(approximately-greater-than)Tc) and low (T〈Tc−40 K) temperature phases. Infrared reflectivity (1012–1014 Hz) and submillimeter transmission (1011–3×1012 Hz) measurements yield dielectric losses which are believed to be mainly of intrinsic origin (one- and two-phonon absorption). Comparing a theory of two-phonon difference absorption processes, due to thermally activated polar branches, with the loss measured at 400–1400 GHz, the intrinsic loss can be extrapolated to lower frequencies. At 10 GHz the extrapolated value is about 1/4 of the loss actually measured in a BYT resonator. Nonpolar phonons, including the soft branch, which have not been considered for the extrapolation procedure, are partially responsible. The temperature dependencies indicate the soft branch to be of considerable importance for intrinsic losses. Oxygen vacancies can be excluded as an extrinsic loss source, as sintering and annealing in N2, air, and O2 had no measurable influence on the loss at 10 GHz.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4126-4130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric properties of single crystals of LaGaO3 have been measured at low frequencies as well as in the microwave region over a wide temperature range. Measurements performed on two crystal orientations, viz. (001) and (110), show dielectric anomalies at a transition near 145 °C. Dielectric anisotropy below, but not above, 145 °C confirm the previously reported orthorhombic symmetry at room temperature and rhombohedral symmetry above 145 °C. Domain wall motion which arises as a result of a phase transition has been observed around 145 °C.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 776-778 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices. Very reactive zirconium films have been taken in order to test the quality of the specially designed RuO2/Cr buffer under the condition of in situ sputter deposition of PZT at 600 °C. The PZT/RuO2 interface was found to be free of intermediate phases. A PZT activated metallic micromechanical element was demonstrated with a thin film Zr membrane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3414-3425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric behavior and structure of the Sr(Zn1/3Nb2/3)O3-Ba(Zn1/3Nb2/3)O3 solid solution have been investigated with the intention of understanding the relationship between the structural changes and the temperature coefficient of the relative permittivity τε. A correlation between the value of τε and the occurrence of O-octahedra tilts has been established. The occurrence of ferroelastic domains and their influence on τε has also been investigated. It is proposed that the results obtained can be used to generalize about the structure-property relationships in compounds of the same class.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The crystallization of gallium lanthanum sulfide (GLS) glasses of composition (100 - x)Ga2S3xLa2S3 (mol%) has been analyzed using X-ray diffraction, and optical and transmission electron microscopy. The major crystalline phase, X, was found to be different from the La3.33Ga6S14 phase reported previously in similar compositions. X was the primary phase present and was observed in all samples, forming on quenching as well as on subsequent heat treatment. The phase occurred as spherulites composed of lamellae, approximately 1 µm wide and all of the same orientation. A small quantity of crystals of Ga2S3 (20 nm) were observed to grow discontinuously between the lamellae. Electron diffraction and energy dispersive X-ray analysis suggested that phase X was monoclinic and had approximately a 2:1 Ga2S3:La2S3 ratio.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Lead zirconate titanate (PZT) thin films were prepared on platinized silicon substrates by dip-coating using a modified diol-based sol–gel route without and with up to 5 mol% PZT nanometric seeds dispersed in the precursor sol. A metastable intermetallic PtxPb phase formed at the early stages of heat treatment. XRD, TEM, and RBS revealed that the thickness and stoichiometry of the PtxPb layer varied with the concentration of seeds and heat treatment of the films. The relation of the PtxPb layer to the final crystalline texture of the PZT thin films is reported and discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 3 (1992), S. 51-63 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Lead scandium tantalate (PST) thin films sputtered onto sapphire substrates have been studied by using transmission electron microscopy. Samples in transverse section were used to characterize the microstructure of the thin films as a function of distance from the PST-sapphire interface whereas samples in plan section allowed a more detailed, structural investigation of the PST. A liquid nitrogen cold stage was used to induce the paraelectric-ferroelectric phase transitionin situ and to perform heating and cooling experiments on the thin films. In general, samples which had the lowest dielectric constants were found to have a layer of unreacted ScTaO4 at the film-substrate interface, whereas the highest dielectric constants were associated with fully perovskite-structured films. Films prepared by the sequential deposition of ScTaO4 and PbO, followed by heat treatment, readily spalled from the sapphire. They also exhibited an increase in the Sc and Ta cation order with distance from the film-sapphire interface. A sample prepared by the simultaneous deposition of ScTaO4 and PbO did not spall and showed an increase in structural order at both the PST-sapphire interface and at the film surface.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...