ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Data on the electrical conductivity, the thermoelectric power, and the Hall and Nernst-Ettingshausen effects in the temperature range from 77 to 400 K for the a solid solution PbTe-SnTe with a high In content (3 at. %) and additional doping with chlorine and thallium are presented. Specifically, the Nernst-Ettingshausen coefficient exhibits properties which are unusual for IV–VI semiconductors: It is positive and decreases rapidly with increasing temperature. The experimental data are discussed on the basis of a model in which the main transport mechanism is hopping conduction along strongly localized electronic states of the In impurity. Conduction along delocalized states of the conduction band makes a substantial contribution to the effects observed in a transverse magnetic field. The model gives satisfactory agreement with experiment, including the sign, magnitude, and temperature dependence of the Nernst-Ettingshausen coefficient.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187466
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