Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 2691-2693
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly stable varistor (voltage-limiting) property is observed for ceramics based on donor doped (large-closed-square)Ba1−xSrx(large-closed-square)Ti1−yZryO3 (x〈0.35, y〈0.05), when the ambient temperature (Ta) is above the Curie point (Tc). If Ta〈Tc, the same ceramics showed stable current-limiting behavior. The leakage current and the breakdown voltage as well as the nonlinearity coefficient (α=30–50) could be varied with the Tc-shifting components, the grain boundary layer modifiers and the post-sintering annealing. Analyses of the current-voltage relations show that grain boundary layer conduction at Ta〈Tc corresponds to tunneling across asymmetric barriers formed under steady-state joule heating. At Ta(approximately-greater-than)Tc, trap-related conduction gives way to tunneling across symmetric barriers as the field strength increases.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105886
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