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  • 1
    Electronic Resource
    Electronic Resource
    dc reactive magnetron sputtering of titanium-structural and optical characterization of TiO2 films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1421-1427 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper deals with the reactive sputtering of titanium in an argon and oxygen mixture. The variation in cathode potential as a function of oxygen partial pressure has been explained in terms of cathode poisoning effects. The titania films deposited during this process have been studied for their structural and optical characteristics. The effect of substrate temperature (from 25 to 400 °C) and annealing (from 250 to 700 °C) on the packing density, refractive index, extinction coefficient, and crystallinity has been investigated. The refractive index varied from 2.24 to 2.46 and extinction coefficient from 2.6 × 10−3 to 10.4× 10−3 at 500 nm as the substrate temperature increased from 25 to 400 °C. The refractive index increased from 2.19 to 2.35 and extinction coefficient changed from 3.2× 10−3 to 11.6 × 10−3 at 500 nm as the annealing temperature was increased from 250 to 700 °C. Anatase and rutile phases have been observed in the films deposited at 400 °C substrate temperature and annealed at 300 °C. The changes in the optical constants at higher substrate temperature have been attributed to an increase in packing density, oxygen content, and crystallinity of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351264
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  • 2
    Electronic Resource
    Electronic Resource
    Studies on glow-discharge characteristics during dc reactive magnetron sputtering (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6652-6655 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of reactive sputtering is influenced by the reactive gas pressure and the rate of sputtering because the glow-discharge characteristics vary considerably in the presence of reactive gas. The discharge characteristics during magnetron sputtering of copper in an argon and oxygen atmosphere have been investigated in the present study. The variation in the cathode potentials has been explained in terms of negative ion formation and target poisoning effects. It has been found that the rate of deposition and the oxygen partial pressure influence target poisoning, which in turn influences the discharge characteristics and rate of deposition. The properties of films deposited under different conditions have been correlated with the discharge characteristics and target poisoning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348881
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  • 3
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma source for ion assisted deposition of thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 467-472 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron cyclotron resonance (ECR) plasma source (10 cm in diameter) has been developed for ion assisted sputter deposition of thin films. Variation of plasma parameters like ion density, electron temperature, plasma potential, and floating potential as a function of pressure and microwave power has been studied using Langmuir probe analysis. The ECR source gives an ion density of 1.01×1011/cm3 at a distance of 8 cm from the source exit at a pressure of 8×10−4 mbar and 400 W of microwave power. The uniformity of the plasma parameters at the substrate position was found to be ±2% over a diameter of 12 cm. Thin films of copper and silicon nitride have been deposited by rf sputtering in the presence of ECR plasma. The properties showed a significant change at an ECR power of 100 W. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150225
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  • 4
    Electronic Resource
    Electronic Resource
    Study of electrical properties of pulsed excimer laser deposited strontium titanate films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2604-2611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of 〈100〉 and 〈110〉 oriented growth after annealing by rapid thermal annealing at 600 °C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/μm2, and a charge density of 40 fC/μm2 for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356235
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  • 5
    Electronic Resource
    Electronic Resource
    Vacuum emissivity meter for thermal emittance measurements of coatings (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 817-818 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The problems in measuring thermal emittance by steady-state calorimetric technique have been analyzed. A few suggestions to make it more accurate, simple, and rapid have been discussed and results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139784
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed excimer laser ablation of (Pb,La)TiO3 thin films for dynamic random access memory devices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1591-1593 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline (Pb,La)TiO3 thin films were deposited by pulsed excimer laser ablation on Si and Pt coated Si substrates. The crystallinity of the films showed dependence on the annealing temperature and oxygen pressure during ablation. Similar trends reflected in the dielectric behavior in terms of varying dielectric permittivity between 430–620 as the ablation pressure varied between 1 and 100 mTorr. Films exhibited the presence of ferroelectricity in terms of hysteresis in capacitance-voltage characteristic in a metal-ferroelectric-metal configuration. The charge storage density estimated from the polarization measurements was about 10 μC/cm2, while a leakage current density of 10−8 A/cm2 was observed at an applied field of 100 kV/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111849
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  • 7
    Electronic Resource
    Electronic Resource
    Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 628-630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450 °C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450 °C, along with hexagonal phase. The dielectric constant was found to be 6–8 and the resistivity was about 1012 Ω cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about 1.18×1012 eV−1 cm−2. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118332
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  • 8
    Electronic Resource
    Electronic Resource
    Powered automatic measuring system for Langmuir probe plasma analysis (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 4312-4314 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Langmuir probe analysis of a sputtering glow discharge leads to errors in measurements due to contamination of the probe surface by the sputter deposition from the target. An automatic Langmuir probe system using a personal computer has been designed. The design details and performance evaluation of this system are discussed in this article. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412855
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation and characterization of Cu-Cu2O cermet films (1990)
    Springer
    Applied physics 51 (1990), S. 423-426 
    Details
    ISSN: 1432-0630
    Keywords: 81.15C ; 81.40 Rs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Metal-insulator composites (cermets) find use in a wide range of applications. In this paper the preparation of cermet films by dc reactive magnetron sputtering is presented. These cermets have been characterised by measuring their electrical resistance and the properties have been correlated to the microstructure and composition. Magnetron sputtering is found to be very effective in controlling the composition of the deposited films, enabling the preparation of films with tailored properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348384
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  • 10
    Electronic Resource
    Electronic Resource
    Tantalum oxide films prepared by unbalanced reactive magnetron sputtering (1999)
    Springer
    Journal of materials science 18 (1999), S. 1949-1951 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1006653803592
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