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  • 1
    Publication Date: 2022-05-27
    Description: Author Posting. © American Meteorological Society, 2021. This article is posted here by permission of American Meteorological Society for personal use, not for redistribution. The definitive version was published in Bulletin of the American Meteorological Society 102(10), (2021): E1936–E1951, https://doi.org/10.1175/BAMS-D-20-0113.1.
    Description: In the Bay of Bengal, the warm, dry boreal spring concludes with the onset of the summer monsoon and accompanying southwesterly winds, heavy rains, and variable air–sea fluxes. Here, we summarize the 2018 monsoon onset using observations collected through the multinational Monsoon Intraseasonal Oscillations in the Bay of Bengal (MISO-BoB) program between the United States, India, and Sri Lanka. MISO-BoB aims to improve understanding of monsoon intraseasonal variability, and the 2018 field effort captured the coupled air–sea response during a transition from active-to-break conditions in the central BoB. The active phase of the ∼20-day research cruise was characterized by warm sea surface temperature (SST 〉 30°C), cold atmospheric outflows with intermittent heavy rainfall, and increasing winds (from 2 to 15 m s−1). Accumulated rainfall exceeded 200 mm with 90% of precipitation occurring during the first week. The following break period was both dry and clear, with persistent 10–12 m s−1 wind and evaporation of 0.2 mm h−1. The evolving environmental state included a deepening ocean mixed layer (from ∼20 to 50 m), cooling SST (by ∼1°C), and warming/drying of the lower to midtroposphere. Local atmospheric development was consistent with phasing of the large-scale intraseasonal oscillation. The upper ocean stores significant heat in the BoB, enough to maintain SST above 29°C despite cooling by surface fluxes and ocean mixing. Comparison with reanalysis indicates biases in air–sea fluxes, which may be related to overly cool prescribed SST. Resolution of such biases offers a path toward improved forecasting of transition periods in the monsoon.
    Description: This work was supported through the U.S. Office of Naval Research’s Departmental Research Initiative: Monsoon Intraseasonal Oscillations in the Bay of Bengal, the Indian Ministry of Earth Science’s Ocean Mixing and Monsoons Program, and the Sri Lankan National Aquatic Resources Research and Development Agency. We thank the Captain and crew of the R/V Thompson for their help in data collection. Surface atmospheric fields included fluxes were quality controlled and processed by the Boundary Layer Observations and Processes Team within the NOAA Physical Sciences Laboratory. Forecast analysis was completed by India Meteorological Department. Drone image was taken by Shreyas Kamat with annotations by Gualtiero Spiro Jaeger. We also recognize the numerous researchers who supported cruise- and land-based measurements. This work represents Lamont-Doherty Earth Observatory contribution number 8503, and PMEL contribution number 5193.
    Description: 2022-04-01
    Keywords: Atmosphere-ocean interaction ; Monsoons ; In situ atmospheric observations ; In situ oceanic observations
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2968-2970 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a combination of low-temperature photoluminescence and luminescence excitation spectroscopies together with appropriate modelization can provide the precise information needed for a thorough control of interdiffusion in quantum well structures. A fit of observed and calculated transition energies up to five energy levels, using the interdiffusion length as a unique parameter, is considered. The potentiality of this procedure to fully characterize the interdiffusion process is illustrated by considering the examples of lightly and heavily intermixed GaAs-AlGaAs multiquantum wells.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1498-1501 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence emission attributed to (SiAs-VAs) at 1.77 eV at 77 K has been previously observed in annealed Si-doped Al0.3Ga0.7As layers grown by molecular beam epitaxy at 680 °C. An emission with similar characteristics has now been observed in as-grown samples fabricated at lower temperatures. New results render the attribution of the deep PL emission to the pair (SiIII-SiAs) more likely. The possibility of a heat treatment producing the same defect as a low-temperature molecular beam epitaxy growth is also discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 812-815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of excitonic transitions in pseudomorphic single quantum wells of InxGa1−xAs grown on a GaAs substrate is presented. The experimental data are obtained by the in-plane photocurrent spectroscopy technique. The interpretation, which is based on the deformation potential and elastic theories, includes valence-band mixing with no adjustable parameters. The present experimental results, and those compiled from recently published data, are well interpreted from a unique set of measured parameters. From calculations and experiments it emerges that the light holes confine in the strained ternary for all In fractions below 0.83.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the potentiality of a phosphorus-doped silicon oxide (SiO:P) carrier-free disordering source for applications in photonic devices integration schemes. This is accomplished in three successive steps by employing an InGaAsP/InGaAsP structure with compressively strained wells and lattice-matched barriers designed for operation around ∼1.55 μm. First of all, we showed that the SiO:P encapsulant offers a good control over a wide range of disorder (blue shifts as high as ∼150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic features in moderately blue-shifted (∼40 meV) samples. And, finally, a first attempt of its application in integration technology is made by realizing a monolithic composite of a distributed feedback laser and a quantum-confined stark effect electroabsorption modulator operating around 1.54 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2190-2192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show here that the implants of oxygen, a basically nondopant impurity, after adequate high-temperature annealings (for example, 750 °C, 1 h furnace anneal) lead to a significant interdiffusion of group III atoms in molecular beam epitaxy grown In0.53Ga0.47As-In0.52Al0.48As multiquantum wells (MQWs). Both photoluminescence and Auger electron spectroscopy measurements (coupled to Ar+ ion etching) have been employed to monitor disordering in MQWs implanted with oxygen (5×1013 to 5×1014 ions cm−2) and subsequently annealed using either rapid thermal anneals or long duration furnace anneals. The role of oxygen to enhance group III atom (Al, Ga, and In) interdiffusion is unambiguously established and a tentative explanation based on a possible migration of oxygen in these MQWs is proposed and dissussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2861-2863 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAsN layers with good structural quality and surface morphology have been successfully grown on a GaAs substrate using atmospheric pressure metal organic vapor phase epitaxy. A new combination of precursors namely, dimethylhydrazine for nitrogen and tertiarybutylarsine instead of conventional arsine for arsenic, greatly facilitated growths at temperatures as low as 500 °C. Layers with N content as high as 3% and corresponding to room temperature photoluminescence (PL) peak wavelength of 1.17 μm (1.064 eV) have been obtained. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 96-98 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality 15-period strain-compensated InAsP/InGaP electroabsorption (EA) modulator structures have been grown by atmospheric pressure metal–organic vapor epitaxy. The incorporation of large compressive strain (∼1.7%) in the InAsP wells and tensile strain (∼−1.8%) in the InGaP barriers necessitated the growth of a few InP monolayers between the wells and barriers. The high structural quality of such samples has been demonstrated by (cross-sectional transmission electron microscopy analysis to be free of misfit dislocations and thickness undulations. The detection of a sharp and abrupt room-temperature exciton peak both in the photoconductivity and photoluminescence measurements further confirmed their excellent optical quality. 100 μm cavity length EA modulators fabricated in these structures exhibited excellent performances namely, an extinction ratio higher than 20 dB for 2.5 V drive voltage, a 3 dB bandwidth over 20 GHz, and low coupling losses to fiber (less than 2.5 dB per facet). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4812-4815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By studying the properties of nondopant impurities (P and In matrix elements, and Fe deep impurity) implanted Zn-doped p+-InP (p∼7×1017 holes cm−3) before and after varied annealing treatments (conventional furnace and rapid thermal anneals), we show the following; (i) the implantation-induced defects lead to electrical compensation in the bulk of InP far beyond the implanted regions; (ii) the compensating centers result from a direct interaction between fast diffusing defects (both during implantation and annealing processes) and Zn atoms.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 444-447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence spectra of variously silicon-doped Al0.3Ga0.7As (Al0.3Ga0.7As@B: Si) single layers grown by molecular-beam epitaxy were investigated as a function of silicon effusion-cell temperature. A correlation between silicon incorporation as a complex involving SiAs and the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.
    Type of Medium: Electronic Resource
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