ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the formation of the doublet structure of the A n=1 photoluminescence band is interference of the exciton radiation at the boundaries of the near-surface dead layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1130406
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