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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3675-3680 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lithium tantalate thin films were grown on the prismatic plane of sapphire substrates by metalorganic chemical vapor deposition. The film contained two crystallographic variants, both epitaxially oriented with respect to the substrate. The variants were related to each other by 180° rotation about the c axis (which lies in the interface plane). A rectangular misfit dislocation network at the interface was imaged by cross-sectional high-resolution transmission electron microscopy, along two orthogonal directions, and by plan-view weak beam dark field transmission electron microscopy. The Burgers vectors of these two orthogonal sets of misfit dislocations were determined to be 1/3[11¯00] and 1/3[0001]. The spacing of the dislocations was nearly exactly equal to the ideal values suggesting a very high degree of epitaxy, which was also confirmed by nearly equal values of the full width at half-maximum of x-ray peaks in the ω scans obtained from the overgrowth and the sapphire substrate. The perfection of the epitaxy is attributed to the lack of multiplicity of slip systems in the interface plane for accommodating the misfit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 88-97 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The spectrum of the modulus and the imaginary part of the third order nonlinear optical susceptibility χ(3) of polydiacetylene was studied over the range 750–1000 nm by a combination of two-photon absorption and degenerate four wave mixing measurements. A peak in the two-photon absorption spectrum near 880 nm was found to be due to induced absorption, probably caused by direct optical excitation of the long-lived triplet exciton. No clear evidence was observed for resonances due to two-photon accessible Ag symmetry states in the spectral range studied.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 792-794 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coherency of the domain walls forming between the a and c domains in epitaxial lead titanate films forces a tilt in the a-domains with respect to the surface normal of the (001)SrTiO3 substrate. It is shown that the measurement of the relative volume fraction of the domains requires mapping of the x-ray diffraction intensity distribution in the reciprocal space. Maps for lead titanate films of different thickness show that a domains are essentially absent in films less than 50 nm thick and approach 25% volume fraction at a thickness of 350 nm. The tilt angle, which lies in the range 2.65±0.5°, remains unchanged with thickness. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 4877-4881 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2718-2720 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conditions for the optimization of short pulse amplification and gating times in vertical cavity laser amplifiers are elucidated using femtosecond photoexcitation. The experimental results pertaining to the temporal response are analyzed by a theoretical model taking into account the carrier heating and the Fabry–Perot nature of the cavity. A 20 dB amplification gain is obtained in a vertical cavity structure at 1.53 μm with a capacity to function at a rate 〉25 Gb/s. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 759-761 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on ultrafast excitonic nonlinearities in ion-implanted InGaAs/InAlAs multiple quantum wells. We find that irradiation with energetic O+ and Ni+ ions can reduce the carrier lifetime from 1.6 ns down to 1.7 ps without significantly altering the excitonic absorption properties, making efficient fast saturable absorbers in the 1.3–1.5 μm wavelength range. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 564-566 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (TEM) shows that MgO films, grown on (001) GaAs by magnetron sputtering, are single crystal with a cube-on-cube relationship with the substrate, even though they are separated from the substrate by an amorphous interlayer. Scanning TEM–energy dispersive x-ray and scanning TEM–electron energy loss spectroscopy analysis of the interlayer shows that it consists of the native oxide of GaAs as well as nanocrystalline MgO. It is proposed that epitaxial MgO nucleated at pin holes produced by volatilization of the native oxide.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2359-2361 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 30 dB gain with multi-GHz modulation bandwidth is obtained in an optically pumped vertical cavity Fabry–Pérot structure. This device may be called a vertical cavity amplifying photonic switch (VCAPS). The amplification configuration has been used for a direct measurement of the carrier induced refractive index change over the absorption as well as the gain regime. © 1994 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2818-2820 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial structural development and surface reactions of the alkaline earth metals with silicon have been studied as a function of surface coverage. The barium reaction has been characterized in detail from submonolayer structures to the thick film orthorhombic phase, BaSi2. From 0 to 1 monolayer a series of ordered surface structures develops that suggests a cubic Ba-Si compound. We have also shown that strontium, calcium, and magnesium develop these highly ordered submonolayer silicides. These submonolayer structures are the templates for the heteroepitaxial transition to alkaline earth containing oxides on silicon.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A combination of methods, Bragg diffraction, small-angle X-ray scattering (SAXS), and transmission electron microscopy, is applied to the characterization of nanodomains and nanocrystals in polymer-derived ceramics (PDCs). Detailed study of two materials, silicon carbonitride (SiCN) and a SiCN–zirconia nanocomposite, is presented. The first contains domains which can be measured only by SAXS. However, the nanocrystallites of zirconia in the second material can be quantatively studied by all three techniques. In both instances, we find the SAXS to be particularly useful because these data provide detailed information regarding the size distribution of the domains and the crystallites. This information can be valuable in understanding the materials science of PDCs: e,g., the change in the distribution and the average size of the nanoclusters can be modeled to understand the kinetic mechanisms of coarsening at high temperatures.
    Type of Medium: Electronic Resource
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