ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A comprehensive simulation of etching profile evolution requires knowledge of theetching rates at all points of the profile surface during the etching process. Electrons do notcontribute directly to the material removal, but they are the source, together with positive ions, ofthe profile charging that has many negative consequences on the final outcome of the processespecially in the case of insulating material etching. The ability to simulate feature charging wasadded to the 3D level set profile evolution simulator described earlier. The ion and electron fluxeswere computed along the feature using the Monte Carlo method. The surface potential profiles andelectric field for the entire feature were generated by solving the Laplace equation using finiteelements method. Calculations were performed in the case of a simplified model of Ar+/CF4 nonequilibriumplasma etching of SiO2
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.53.pdf
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