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  • 1
    Publication Date: 2022-06-14
    Description: Abstract: On Kodiak Island (Alaska), decimeter-thick black fault rocks (BFR) are at the core of 10's meters-thick foliated cataclasites. Cataclasites belong to mélanges regarded as paleo-décollement active at 12-14 km depth and 230-260oC. Each black layer is mappable for tens of meters along strike. The BFR feature a complex layering made at microscale by alternation of granular and crystalline microtextures, composed of micron-scale sub-rounded quartz and plagioclase in an ultrafine, phyllosilicate-rich matrix. In the crystalline microlayers, tabular zoned microlites of plagioclase make much of the matrix. No such feldspars are found in the cataclasite. We interpret crystalline microlayers as pseudotachylytes. The granular microlayers show higher grain size variability, crushed microlites and textures typical of fluidization and granular flow deformation. Crosscutting relationships between granular and crystalline microlayers include flow and intrusion structures and mutual brittle truncation. This suggests that each 10's centimeter-thick composite BFR record multiple pulses of seismic slip. In each pulse, ultracomminuted fluidized material and friction melt formed and deformed together in a ductile fashion. Brittle truncation by another pulse occurred after solidification of the friction melt and the fluidized rock. XRPD and XRF analyses show that BFR have similar mineral composition and chemical content as the cataclasites. The observed systematic chemical differences cannot be explained by bulk or preferential melting of any of the cataclasite components. The presence of an open, fluid-infiltrated system with BFR later alteration is suggested. The geochemical results indicate that these subduction-related pseudotachylytes, differ from those typically described in crystalline rocks and other tectonic settings.
    Description: Published
    Description: 3.1. Fisica dei terremoti
    Description: JCR Journal
    Description: open
    Keywords: earthquakes ; fault rocks ; 04. Solid Earth::04.04. Geology::04.04.99. General or miscellaneous
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3843-3847 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an experimental investigation into the effect of high-temperature heat treatment on the electrical resistivity and Seebeck coefficient of silicon germanium-gallium phosphide alloys and the accompanying changes in morphology are reported. The specimens were heat treated for different periods of time and quenched or allowed to cool slowly in air. Their morphology was investigated using scanning electron microscopy and electron spectroscopy for chemical analysis. The electrical resistivity and Seebeck coefficient were measured as a function of temperature from room temperature to about 800 K. Substantial changes in the electrical properties and in morphology were observed after 15 min and 4-h periods of heat treatment, respectively. A less significant decrease in electrical resistivity accompanied further heat treatment. However, the Seebeck coefficient remained almost constant which resulted in an increase in the electrical power factor. Prior to heat treatment, the alloy consisted of host matrix and a silicon-rich black phase. Heat treatment was accompanied by the appearance of a white phase which was rich in germanium and gallium phosphide. Although in general it was not possible to correlate the changes in electrical properties with the morphology. The highest power factor obtained in this investigation corresponded to a morphology which consisted of the host matrix and a significant proportion of white phase.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4683-4685 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recent results of C. B. Vining, W. Laskow, J. O. Hanson, R. R. Van der Beck, and P. D. Gorsuch [J. Appl. Phys. 69, 4333 (1991)] regarding the effect of grain size on the thermoelectric figure of merit of heavily doped p-type silicon germanium alloys are compared to earlier results on similar materials. The data confirm that the room-temperature figure-of-merit is significantly increased in materials with a small grain size.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7871-7875 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of clathrate compounds Ba8Ga16Si30, Ba8Ga16Ge30, Ba8Ga16Sn30, and Sr8Ga16Ge30 were prepared by direct melting and characterized using X-ray powder diffraction and differential thermal analysis. The Ge- and Si-based clathrates melt congruently, whereas Ba8Ga16Sn30 melts incongruently. At room temperature the Ge- and Si-based clathrates possess a moderate negative Seebeck coefficient and a high electron concentration in the range of 7×1020–9×1020 cm−3 while Ba8Ga16Sn30 exhibits substantially lower electron concentration of 2.2×1019 cm−3. The Seebeck coefficient and electrical resistivity were measured over the range 100–870 K. The temperature dependence of transport properties of the clathrates is typical for heavily doped semiconductors. The transport properties were analyzed using a standard semiconductor transport model. There is a good agreement between the assumed model and experimental temperature dependence of the Seebeck coefficient in the extrinsic conductivity range for all studied clathrates apart from Ba8Ga16Ge30. The calculated effective masses of the clathrates range from 0.9 to 3 of the free electron mass. The estimated ZT values are 0.7 for Ba8Ga16Ge30 at 700 K and 0.87 for Ba8Ga16Si30 at 870 K. The potential for thermoelectric applications of these materials is assessed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 758-766 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Irreducible representations of the real compact Lie algebra g2 are given in g2&supuline;so(4) bases. All missing labels are accounted for by the explicit construction of a g2&supuline;so(4) basis of vector holomorphic functions. The general problem of missing internal labels is also briefly discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 29 (1988), S. 767-776 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Irreducible representations of the real compact Lie algebra g2 are given in g2&supuline; su(3) bases. A missing label is accounted for by the explicit construction of a g2&supuline; su(3) basis of vector holomorphic functions. Analytical results are given for two multiplicity-free classes of irreps. It is also shown how vector coherent state (VCS) theory accommodates the decomposition of the nilpotent raising operator subalgebra of an arbitrary Lie algebra into a finite but arbitrary number of irreducible tensorial sets under transformations generated by a stability algebra.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 1231-1236 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The existence of a complete set of SU(3) tensor operators in the enveloping algebra of SO*(8) is demonstrated. The analysis recasts a parallel analysis by Biedenharn and Flath [Commun. Math. Phys. 93, 143 (1984)] concerning an SO(6,2) model for SU(3) in the isomorphic but simpler framework of an SO*(8) model.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 32 (1991), S. 2614-2634 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A general definition is given of vector-coherent state (VCS) representation theory. It is shown that the theory is more general than suggested by previous applications and that it incorporates the standard theories of induced representations as special cases. The associated K-matrix theory is also given a fuller treatment than hitherto and shown to provide a rather general algorithm both for projecting VCS representations from larger representations in which they are embedded and for determining the Hermitian form, with respect to which an isometric-equivalent representation is, in fact, isometric.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 14-36 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A differential representation of the classical Lie superalgebra osp(m/2n) acting on superfield functions is given. This representation is used to construct matrix representations of the finite-dimensional irreducible representations of the algebra. Inner products on the irreducible spaces are discussed and classes of star and grade-star equivalent representations are identified.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3207-3210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline samples of GeBi4Te7 with different compositional deviations from stoichiometry have been prepared and characterized by Seebeck coefficient and electrical resistivity measurements over the temperature range 100–750 K. At room temperature all samples exhibit n-type conductivity and a high concentration of electrons in the range 1.7×1019–2.4×1020 cm−3. The width of the energy band gap of GeBi4Te7 was 0.21±0.02 eV as determined from the temperature dependence of electrical resistivity in the intrinsic region. A dominant point defects model is proposed to explain the influence of compositional nonstoichiometry on the transport properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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