ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Keywords
Publisher
Language
Years
  • 1
    Electronic Resource
    Electronic Resource
    Automatic Coulometric Titrations Involving Amperometric End Point (1955)
    s.l. : American Chemical Society
    Analytical chemistry 27 (1955), S. 1526-1531 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60106a007
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    The gettering efficiency of a direct bonded interface (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6576-6579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In these studies the gettering efficiency of copper at a direct bonded interface is compared to the gettering efficiency of a bulk defect zone formed during a one step and three step annealing process of Czochralski silicon wafers. The gettering efficiency of a bulk defect zone is considerably higher than that of the interface. Thus intrinsic gettering is expected to be effective in gettering direct bonded p-n junctions. Without any intrinsic gettering zone, copper silicide readily precipitates at the bonded interface, forming complex star-shaped colonies. Their morphology changes into single colonies in {110} planes if the wafer pairs are prestressed during contacting at room temperature. In this case the gettering efficiency of the bonded interface increases in comparison to the bulk defect zone. Prestressing experiments have shown that the denuded zone width in tensile stressed regions of a wafer increases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355095
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Vectorial magnetization of metal evaporated tapes (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5512-5516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a three-dimensional vector vibrating sample magnetometer the magnetization reversal behavior of obliquely evaporated Co-Ni-O layers (metal-evaporated tapes) is studied. It is found that the direction of preferred magnetization is tilted out of the film plane. In addition, the measurements show that the projection of the axis of preferred magnetization into the film plane does not coincide with the direction of tape motion in general. This is caused by the geometry of the evaporation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350208
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Copper silicide precipitation influenced by the strain of a Ge0.02Si0.98 heteroepitaxial layer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4994-5000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper silicide precipitates in silicon by forming elliptical colonies in {110} planes. In strained Ge0.02Si0.98 heteroepitaxial layers on (001) silicon substrates the colonies prefer {110} planes intersecting the surface under an angle of 45° with zero strain and avoid {110} planes perpendicular to the surface with maximum compressive strain. For the first time copper silicide precipitate colonies lying in (001) surrounded by Lomer dislocations have been observed and studied in detail. They are due to the maximum tensile strain in the [001] direction. The ordering of colonies increases as long as no relaxation via misfit dislocations occurs. The depth of the defect zone containing copper silicide precipitate colonies in the substrate wafer increases with the thickness of a thermal oxide layer on its surface. After annealing in nitrogen the copper silicide precipitate zone remains constant. The morphology of the copper precipitate colonies is first of all determined by the stress of the studied layer system and only to a less extent by the available silicon self-interstitials. Copper silicide precipitate colonies grow below a relaxing heteroepitaxial layer in a patterned arrangement that corresponds to the arrangement of the misfit dislocations. The elastic strain of the heteroepitaxial layer strongly influences the accumulation of copper impurities in the silicon substrate. The smaller the distance between the misfit dislocations becomes, the smaller is the depth of the defect zone containing copper silicide precipitate colonies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355791
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 99-101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy has been used to investigate thin single-crystal films of ytterbium arsenide grown epitaxially on GaAs by molecular beam epitaxy. Sputter profiles indicate the absence of oxide impurities and the presence of only trivalent ytterbium, which means that the epitaxial film is composed entirely of YbAs. X-ray diffraction analysis revealed a moderate imperfection of the crystalline quality of the YbAs and a lattice misfit of about 8×10−3 with respect to GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100361
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Slip-free processing of 300 mm silicon batch wafers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1543-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under gravitational and thermal constraints of integrated-circuit (IC) process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We present a force balance model to describe the strain relaxation in large wafer diameter, which includes heat transfer effects and the upper yield point of the silicon material. The material attributes, such as oxygen content and the state of oxygen aggregation, are taken into account. The theoretical approach allows the calculation of wafer mechanics and ramp rate profiles for an arbitrary high-temperature process. Plastic deformation of silicon wafers caused by thermal stresses at high temperatures can be controlled by process design. Deformation due to gravitational forces can be prevented through appropriate equipment design. The quantitative theory proposed here provides guidance for computer simulation to configure stable slip-free wafer process flow under mechanical and thermal loads. Applications include high speed simulation of "what if?" experiments, and initial simulations of large scale experimental sequences. The simulator developed can also be used by IC manufacturers to determine optimum wafer throughput and cycle times in front-end device processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Model calculations of the angular dependence of the switching field of imperfect ferromagnetic particles with special reference to barium ferrite (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3597-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on a one-dimensional model of an infinite material with a slab in which the magnetocrystalline anisotropy is zero [A. Aharoni, Phys. Rev. 119, 127 (1960)], the angular dependence of the switching field is calculated. The results are compared with experimental data of barium ferrite. It is found that for small defect regions the predictions agree well with experimental data, but for bigger ones considerable differences occur. The shape anisotropy effect as well as the effects of inhomogeneous reversals in ideal specimens are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342638
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Comment on "An alternating-gradient magnetometer'' [J. Appl. Phys. 63, 3940 (1988)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1358-1358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a recent article, an alternating field-gradient magnetometer was described [P. J. Flanders, J. Appl. Phys. 63, 3940 (1988)]. For calibration of the system, a calculation was carried out. Here, the treatment of the extension rod of that system and the considerations concerning the piezoceramic are criticized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343033
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Investigations of magnetic hysteresis of barium ferrite using the torsion pendulum method (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5980-5982 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic stiffness is measured by the torsion pendulum method as a function of the applied field. Measurements are performed on random assemblies of chemically coprecipitated barium ferrite powders. The magnetic stiffness for both minor and major loops of the hysteresis cycle is measured and compared with calculated curves based on the model of coherent rotation. The discrepancies between theory and experiment are partly due to the effect of magnetic interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342169
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Laser-induced chemical reactions at the Al/III-V compound semiconductor interface (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1994-2002 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used pulsed laser annealing to promote and characterize highly localized chemical reactions at Al interfaces with III-V compound semiconductors. At successive stages of these laser-induced reactions, we have monitored atomic movement and chemical structure on a microscopic scale using soft x-ray photoemission spectroscopy and Auger electron spectroscopy. For Al on each of the six III-V compound semiconductors investigated, we have found a finite range of energy density above a characteristic threshold energy density such that a chemical reaction is produced without disrupting the surface morphology. The systematic change of threshold with different semiconductors indicates a thermally activated reaction occurring in the molten phase of the Al overlayer and a thin substrate layer. Heat flow calculations, which model the temperature profiles during and after the laser pulse, confirm this model and also account for the highly abrupt interface between the reacted ternary overlayer and the binary substrate. The excellent agreement between experiment and theory demonstrates that thermal properties of the semiconductor have a dominant influence on the interfacial temperature profile and threshold energy density for reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337784
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...