Publication Date:
2015-08-18
Description:
The effective bandgap is a crucial design parameter of heterojunction tunneling field-effect transistors. In this letter, we demonstrate a method to measure the effective bandgap directly from the band-to-band tunneling current of a heterojunction Esaki diode, of which we only require knowledge of the electrostatic potential profile. The method is based on a characteristic exponentially increasing current with forward bias, caused by sharp energy filtering at cryogenic temperature. We apply this method experimentally to a n+In 0.53 Ga 0.47 As/pGaAs 0.5 Sb 0.5 Esaki diode and define requirements to apply it to other heterojunctions.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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