Publication Date:
2019
Description:
Abstract
Previously, we found 3C‐SiC films favor to grow in 〈111〉 orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick 〈110〉‐3C‐SiC is still a big challenge. In this study, thick 3C‐SiC (110) epitaxial films were prepared on Si (110) substrate by laser chemical vapor deposition (LCVD) using hexamethyldisilane (HMDS) in H2 atmosphere. The investigation of growth mechanism showed that the laser of LCVD played an important role during the depositions. Observation by high‐resolution transmission electron microscopy (HRTEM) revealed that the interface of 3C‐SiC (110)/Si (110) exhibited rough texture at atomic level. The atomic roughness on Si (110) surface could be a key factor for 3C‐SiC (110) nucleation. The growth of thick 3C‐SiC (110) epitaxial films could be very promising for new development in power electronics applications.
Print ISSN:
0002-7820
Electronic ISSN:
1551-2916
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
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