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  • 1
    Electronic Resource
    Electronic Resource
    Elastic properties of epitaxial ZnSe(001) films on GaAs measured by Brillouin spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1914-1916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Brillouin scattering experiments have been performed on a series of epitaxially grown ZnSe (001) films on GaAs (001) of thicknesses between 0.23 and 2.0 μm. No thickness-dependent modifications of the elastic constants have been found. The obtained room-temperature values of C11=87.0, C12=54.7, and C44=39.1 GPa are in good agreement with literature values of ZnSe bulk material. The calculation of the theoretical cross sections shows a good agreement with the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339892
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of elastic strain on the energy band gap in heteroepitaxially grown ZnSe (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 333-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence spectra have been measured for a series of ZnSe films of varying thicknesses grown by molecular-beam epitaxy on GaAs, and variations in the spectra have been correlated with changes in the lattice parameter in the epilayer. Elastic strain resulting from in-plane compression of the epilayer is found to cause a displacement of exciton-related photoluminescence features to higher energies with decreasing layer thickness. This behavior reflects an increase in the band gap of ZnSe under increasing strain, similar to the behavior observed in several other zinc-blende semiconductor epilayer systems, but in contrast to the behavior predicted for this particular system by some authors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338826
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of p-type ZnSe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 448-452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lithium-doped ZnSe has been grown on (100) GaAs by molecular beam epitaxy. The epitaxial layers are p-type with net acceptor concentrations (NA−ND) as high as 8×1016 cm−3— the highest ever reported for molecular beam epitaxial ZnSe. Room temperature ac measurements show resistivities as low as 2.9 Ω cm. Higher Li concentrations give rise to self-compensation and a decrease in NA−ND. The details of the electrical and optical characterization of these layers are presented. Rudimentary blue light emitting pn junction diodes have been fabricated. While these devices show dominant blue emission (463 nm) at room temperature, large turn-on voltages indicate that the p-ZnSe/p-GaAs interface presents a large barrier to hole transport. Moreover, we find that difficulty in making device-quality ohmic contacts to p-ZnSe is the next major obstacle to the fabrication of efficient blue light emitting diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345223
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  • 4
    Electronic Resource
    Electronic Resource
    Tunable photoluminescence of uniformly doped short-period GaAs doping superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2805-2810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniformly doped n-p GaAs doping superlattices with smaller period lengths than have been previously considered are characterized by electrochemical capacitance-voltage profiling and low-temperature photoluminescence. In spite of the short period lengths, the n-p structures exhibit obvious doping superlattice attributes. We directly observe free-carrier confinement due to the space-charge potential in superlattices with periods as short as 12 nm. The variation of the photoluminescence energy with excitation intensity decreases with reduced period lengths, while the photoluminescence intensity increases with decreasing periodicity. We observe anomalously red-shifted emission at low photoexcitation intensity in superlattices with periods of 20 nm and less. We argue that radiative recombination between spatially arranged donor and acceptor states associated to the random fluctuations in the superlattice potential occurs in superlattices with periods less than 20 nm. The occupied impurity states give rise to screening of an effective superlattice potential and the observed photoluminescence tunability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351008
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of undoped ZnSe on (100) GaAs by molecular-beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4756-4762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (1.5–2.5 μm thick) ZnSe films have been grown on (100) GaAs substrates by molecular-beam epitaxy to investigate the effects of growth conditions on film properties. A "growth matrix'' was generated by systematically adjusting the growth temperature (TG) through 250, 300, 350 and 400 °C while setting the Zn-to-Se beam pressure ratio at 1/4:1, 1/2:1, 1:1, and 2:1. Reflection high-energy electron diffraction (RHEED) patterns monitored during growth showed surface reconstructions which were characteristic of either Zn- or Se-stabilized growth. In addition to the transition between the two surface reconstructions, a transition from streaky to spotty RHEED patterns was discovered. Both transition lines were mapped onto growth parameter space and their intersection provides a unique reference point in growth space. Low-temperature photoluminescence, optical microscopy and Hall measurements were used to characterize the samples in this growth matrix study and these results were found to be related to the RHEED transitions. One narrow region of growth space was found to produce samples with intense, narrow near-band-edge peaks and small deep-level intensity. Although it was still n type, one of the samples with growth conditions in this region was measured to have a carrier concentration less than 5.6×1015 cm−3 and a peak mobility greater than 7150 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339029
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical characterization of p-type ZnSe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1103-1105 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers doped with lithium have been found to be p type with resistivities as low as 2.9 Ω cm. The majority-carrier types of these films were determined using both capacitance-voltage and potential profiling techniques. The sample resistivities were obtained using ac resistivity measurements and potential profiling. Uncompensated acceptor densities have been measured to be as high as 8×1016 cm−3 using capacitance-voltage profiling. Current-voltage traces taken with evaporated and sputtered gold contacts typically show reverse breakdown which is consistent with avalanche breakdown in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101670
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  • 7
    Electronic Resource
    Electronic Resource
    Electromigration in p-type ZnSe:Li (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1173-1174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration has been observed in certain Li-doped p-type ZnSe epitaxial layers. A correlation is observed between the magnitude of the electromigration and the degree of compensation in the layers, which is consistent with electromigration of Li interstitials. Significantly, uncompensated layers show no electromigration, illustrating that Li atoms on Zn lattice sites (acceptors) are stable at room temperature. The effects of electromigration on the behavior of ZnSe blue light-emitting diodes is considered, and shown to be beneficial in devices with compensated p-type layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104355
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  • 8
    Electronic Resource
    Electronic Resource
    Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 463-465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon incorporation in ZnSe films grown by metalorganic chemical vapor deposition is reported. Secondary-ion mass spectrometry measurements in ZnSe films grown from methylallylselenide and dimethylzinc show an enhanced carbon accumulation at the interface between ZnSe and GaAs. The carbon incorporation in the bulk ZnSe increases with the VI/II ratio and for a value of VI/II=3–4, the amount of incorporated carbon abruptly jumps to concentrations of 1021 cm−3, whereupon the films become polycrystalline. A new shallow peak IC at 2.7920 eV dominates the near-band-edge low-temperature photoluminescence spectra of all carbon-contaminated ZnSe films. The intensity and linewidth of IC increase with the VI/II ratio in a similar manner to the carbon concentration. This peak is proposed to be due to the radiative decay of excitons bound to a complex defect, which is associated with the presence of carbon in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101853
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 42-44 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102641
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  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature excitonic optical nonlinearities of molecular beam epitaxially grown ZnSe thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 182-184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large optical nonlinearities have been observed in molecular beam epitaxially grown thin films of ZnSe at room temperature and at T=150 K. A comparison with a plasma theory indicates that in both cases exciton screening is the dominating mechanism for the nonlinearity. The maximum nonlinear index per excited electron-hole pair at room temperature is comparable to that of bulk GaAs and GaAs-AlGaAs multiple quantum wells. The measured absorption and nonlinear index spectra agree quite well with our calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99513
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