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  • 1
    Publication Date: 2011-08-24
    Description: In order to achieve an impedance-matched millimeter-wave integrated horn antenna mixer array, the characteristics of the antenna probes inside the horn must be known. This paper describes impedance measurements for various probes in low-frequency model horns of two different types: (1) a 3 x 3 array made of aluminum by electric discharge machining and (2) a half horn made of copper sheet placed on a big copper-clad circuit board that was used as an image plane. The results of measurements indicate that the presence of the horn increases the effective length of the probe element, in agreement with reports of Guo et al. (1991) and theoretical analysis of Eleftheriades et al. (1991). It was also found that the resonant frequencies can be controlled by changing the length of the probes or by loading the probes.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Microwave and Optical Technology Letters (ISSN 0895-2477); 6; 8; p. 457-461.
    Format: text
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  • 2
    Publication Date: 2013-08-31
    Description: A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Michigan Univ., The Third International Symposium on Space Terahertz Technology: Symposium Proceedings; p 291-297
    Format: application/pdf
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  • 3
    Publication Date: 2019-07-12
    Description: A quasi-optical power density meter for millimeter and submillimeter wavelengths has been developed. The device is a 2-cm2 thin-film bismuth bolometer deposited on a mylar membrane. The resistance responsivity is 150 Ohms/W, and the time constant is 1 min. The meter is calibrated at DC. The bolometer is much thinner than a wavelength, and can thus be modeled as a lumped resistance in a transmission-line equivalent circuit. The absorption coefficient is 0.5 for 189-Ohms/square film. The power-density meter has been used to measure absolute power densities for millimeter-wave antenna efficiency measurements. Absolute power densities of 0.5 mW/sq cm have been measured to an estimated accuracy of 5 percent.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: IEEE Transactions on Antennas and Propagation (ISSN 0018-926X); 39; 425-428
    Format: text
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