Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 338-344
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley–Read–Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×1010 cm−2. The electron (minority carrier) lifetime is found to be about 6×10−10–10−9 s.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334811
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