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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of the effect of growth conditions on a-SiC:H films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4116-4123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of dissipated power and gas dwell time in SiH4+CH4 plasmas on the properties of a-SiC:H films deposited by plasma-enhanced chemical-vapor deposition have been investigated for different methane fractions in plasmas operating in the low-power regime. Optical, structural, and electrical characterizations have been performed in order to investigate the influence of dissipated power and molecule dwell time on the physical properties of a-SiC:H films. It was found that both the investigated deposition parameters can have a remarkable influence on carbon incorporation and on optical properties such as the energy gap. In particular an increase in the dissipated power or in the molecule dwell time leads to an increase in carbon incorporation and in energy gap. The electrical properties and defect density are still those of device quality films grown in standard deposition conditions and are not influenced by variations in dissipated power or gas dwell time. From these results some conclusions regarding the growth mechanisms are drawn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363283
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  • 2
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5404-5411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Fe3−xSi1+x films have been grown on Si(111) by codeposition at room temperature. Their structural and electronic properties have been investigated by means of low-energy electron diffraction (LEED), x-ray photoelectron diffraction (XPD), and x-ray photoemission spectroscopy (XPS). These films, with compositions ranging from Fe3Si to FeSi, exhibit a (1×1) LEED pattern. Both XPD and core level binding energy measurements indicate that single Fe3−xSi1+x phases (with 0〈x〈1), without bulk counterpart, can be stabilized by epitaxy on Si(111). The XPD experiment clearly shows that these Fe3−xSi1+x (0≤x≤1) films adopt the same cubic structure. Furthermore, the Si 2p, Fe 2p3/2, and Fe 3s core levels are slightly shifted to higher binding energies resulting from chemical effects and differences in local coordination when going from Fe3Si (DO3) to FeSi (CsCl). Multiplet splittings ΔE3s are observed in Fe 3s core-level XPS spectra for all Fe3−xSi1+x compounds except the FeSi (CsCl) one. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359721
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: a wide band gap material for optoelectronic devices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1730-1735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon-nitrogen, a-SiNx:Hy, thin films with optical gap in the range 2.0–5.2 eV have been deposited by 13.56 MHz ultra-high-vacuum plasma enhanced chemical vapor deposition system in SiH4+NH3 gas mixtures. Compositional, optical, dark and photoelectrical and defect characterizations have been performed in order to show that a-SiNx:Hy films can be applied in optoelectronic technology as wide band-gap semiconductor. A comparison between electronic properties of a-SiNx:Hy samples and device quality a-Si1−xCx:H films, already applied in electronic devices, has been carried out. Amorphous silicon-nitrogen films show high deposition rates, good controllability of optical gap, and electronic properties similar to high-quality silicon-carbon films. No doping effect of nitrogen atoms in tetrahedral configuration has been evidenced and spin density below 7×1017 cm−3 have been measured in a-SiNx:Hy films with optical gap as high as 5.2 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360961
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  • 4
    Electronic Resource
    Electronic Resource
    Differences in physical properties of hydrogenated and fluorinated amorphous silicon carbide prepared by reactive sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5641-5645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The paper deals with structural, optical, and electrical properties of a-SiC:H and a-SiC:H,F films prepared by rf sputtering of a silicon target in Ar+H2+CH4 and Ar+H2+CF4 gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350496
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of temperature on structural properties of hydrogenated amorphous silicon-germanium and carbon-silicon-germanium alloys (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2029-2032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the structural properties of a-SiGe:H and a-CSiGe:H films has been studied. The samples were characterized by differential scanning calorimetry, conductivity measurements, electron-spin resonance, infrared, optical, and photoacoustic spectroscopy. The disagreement of previous results of differential scanning calorimetry on hydrogenated amorphous semiconductors samples (a-Si:H and a-Ge:H) is examined and discussed. The equilibration temperature determined by the temperature dependence of dc conductivity agrees well with that of the first exothermic process detected with differential calorimetry. The second exothermic effect occurs when hydrogen evolution starts, as confirmed by electron-spin resonance and infrared spectroscopies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348727
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of doping on the structural and optoelectronic properties of amorphous and microcrystalline silicon carbide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1327-1333 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous and microcrystalline silicon carbide, undoped and doped, has attracted a great attention for its optical and electrical properties. The introduction of dopant atoms in the network of amorphous films permits the control of electrical properties but it gives rise to a decreasing of the optical gap. Microcrystalline SiC:H films seem to provide films having a wide range of electrical conductivities without drastic change in the optical gap. This paper presents the results of a detailed study on the effects of boron and phosphorus doping on structural, optical, and electrical properties of a-SiC:H and μc-SiC:H films. An optical gap as high as 2.1 eV, together with a conductivity of 10−3 Ω−1 cm−1, are shown by doped μc-SiC:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351742
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  • 7
    Electronic Resource
    Electronic Resource
    Er/Si (111) interface intermixing investigation using core level photoemission (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103685
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1384-1386 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of thin CoSi2 films on a Si(111) surface has been studied using surface techniques such as low-energy electron diffraction and photoemission spectroscopy. Various preparation methods at low temperature (≤400 °C) are investigated. Both layer by layer growth and coevaporation invariably exhibit a bulk and surface excess of Si. In contrast a different preparation method where the Co atoms were evaporated onto the Si(111) substrate maintained at ∼360 °C produces CoSi2 films exposing a Co-rich CoSi2 surface without any Si excess in bulk. It is concluded from these experiments that at ∼360 °C diffusion of Si from substrate through the CoSi2 layer is much easier than usually expected and quite sufficient to sustain further CoSi2 growth without any extra Si supply.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100456
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  • 9
    Electronic Resource
    Electronic Resource
    Photoluminescence and electronic density of states in a-C:H films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2520-2522 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of states in the energy region near Fermi level for hydrogenated amorphous carbon thin films is presented. The different types of states are identified in their origin and the problem of their detection is considered. It is shown that only some of these states are accessible to detection by electron spin resonance. A quantitative correlation between their density and the quantum efficiency of the room temperature photoluminescence process is achieved. Such correlation applies to films having a wide range of physical properties deposited by different techniques. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121405
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray photoemission characterization of thin epitaxial Fe silicide phases on Si(111) (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2360-2362 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depending on preparation conditions, Fe silicides grown on Si(111) by means of solid phase epitaxy and molecular beam epitaxy show the formation of the bulk ε-FeSi and β-FeSi2 phases as well as epitaxially grown metastable CsCl- and CaF2-type Fe silicides. The valence-band of these Fe silicides are measured with monochromatized Al Kα x-ray photoemission and angle resolved ultraviolet photoemission and are found to be in remarkable agreement with calculated densities of states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110501
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