Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 1660-1662
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Good-optical-quality C delta-doped AlGaAs layers grown by metalorganic vapor phase epitaxy using CBr4 with the impurities confined over not more than 5 Å and with doping levels above 1×1012 cm−2 are obtained. Such layers are found to be adequate for use in the fabrication of nipi superlattices for amplitude modulation. Yet, little flexibility is found in the growth conditions, in particular for the V to III fluxes ratio, for obtaining such layers. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1382826
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