Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 1772-1774
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Reflectionless tunneling was observed in Nb/GaAs superconductor/semiconductor junctions fabricated by a two-step procedure. First, periodic δ-doped layers were grown by molecular-beam epitaxy near the GaAs surface, followed by an As cap layer to protect the surface during ex situ transfer. Second, Nb was deposited by dc-magnetron sputtering onto a GaAs(001) 2×4 surface in situ after thermal desorption of the cap layer. The magnetotransport behavior of the resulting hybrid junctions was successfully analyzed within the random matrix theory of phase-coherent Andreev transport. The impact of junction morphology on reflectionless tunneling and the applicability of the fabrication technique to the realization of complex superconductor/semiconductor mesoscopic systems are discussed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1357211
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