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  • 1
    Electronic Resource
    Electronic Resource
    Carbon in silicon: Modeling of diffusion and clustering mechanisms (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1582-1587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon often appears in Si in concentrations above its solubility. In this article, we propose a comprehensive model that, taking diffusion and clustering into account, is able to reproduce a variety of experimental results. Simulations have been performed by implementing this model in a Monte-Carlo atomistic simulator. The initial path for clustering included in the model is consistent with experimental observations regarding the formation and dissolution of substitutional C–interstitial C pairs (Cs–Ci). In addition, carbon diffusion profiles at 850 and 900 °C in carbon-doping superlattice structures are well reproduced. Finally, under conditions of thermal generation of intrinsic point defects, the weak temperature dependence of the Si interstitial undersaturation and the vacancy supersaturation in carbon-rich regions also agree with experimental measurements. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489715
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4855-4860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characterization of He-ion implantation-induced deep levels existing in fully implanted p+n InP junctions isolated by He bombardment is reported in this work. An electron trap located at 0.19 eV below the conduction band and a hole trap located at 0.13 eV above the valence band were detected by deep-level transient spectroscopy (DLTS). Several emission characteristics of these traps were extracted from the correlation between DLTS and the capacitance–voltage transient technique. The experimental determination of trap capture properties was also carried out. In particular, the capture kinetics was found to exhibit a strong temperature dependence for both centers. Two experimental methods—direct recording of capture transients and analysis of DLTS peaks—were used to estimate the capture parameters. Finally, some tentative arguments are proposed in order to correlate the results obtained from the thermal emission and capture measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371452
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  • 3
    Electronic Resource
    Electronic Resource
    Dopant level freeze-out and nonideal effects in 6H–SiC epilayer junctions (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 310-315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results obtained from current–voltage (I–V) and capacitance–voltage techniques along with admittance spectroscopy have been qualitatively correlated to achieve a more comprehensive picture of dopant freeze-out and conduction mechanisms in a 6H–SiC n+p-type junction. Special attention was paid to the temperature range of 100–200 K. The dependence of the ideality factor, n, on the temperature was obtained experimentally from the I–V measurements. Two contributions have been considered in its evolution. At room temperature, n is very close to 2, indicating that recombination processes dominate the forward conduction mechanism. This result may be related to the SiC sample preparation process: structural defects may be present at the junction interface giving rise to interface states which act as recombination centers. At low temperatures (100–200 K), the Poole–Frenkel effect on the impurity level is the main effect responsible for the nonideal behavior of the junction. We have carried out a quantitative estimation of the n factor predicted by this effect incorporating partial ionization of the dopant. These calculations agree very well with the experimental values. At these temperatures the thermal excitation is low, the traps remain inactive, and their contribution to the conduction mechanisms is negligible. When the temperature increases, traps become thermally activated and then the recombination processes participate in the conduction mechanisms and they become dominant at room temperature. The admittance analysis allows numerical values of the aluminum emission rate to be obtained at different temperatures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360831
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3143-3150 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy (DLTS) and capacitance–voltage transient technique (CVTT). Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which (at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band) result from RTA, while the origin of the other three levels (at 0.46, 0.25, and 0.27 eV below the conduction band) can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364348
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  • 5
    Electronic Resource
    Electronic Resource
    Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4338-4345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: DX centers in selenium doped AlxGa1−xAs with two values of the aluminum content, x=0.34 and 0.48, are carefully analyzed by three different techniques: deep level transient spectroscopy (DLTS), admittance spectroscopy, and the capacitance voltage transient technique (CVTT). We use conceptual differences between these techniques to extract important information about the nature of the DX centers. Good agreement is found between the capacitance transients recorded during the DLTS measurements and those obtained by CVTT at every point in the space charge region. From that, we conclude that is the very nature of the DX centers the solely responsible for the anomalies found in DLTS results. The main cause for these anomalies is the thermal dependence of the electron capture rate of these centers. CVTT curves also reveal that no electric field enhanced emission processes take place for these centers. For our analysis of the shape of the DLTS and admittance spectroscopy curves we conclude that several DX levels exist, according to the alloy broadening theory. Finally, some simulations of the DLTS spectra were made. These calculations reveal the important effect of experimental parameters such as the filling pulse duration, the velocity of the temperature scan, and the initial conditions of the occupation factor of the deep levels on the DLTS curves. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366242
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 826-828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at which they are obtained. This behavior is explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119658
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7978-7980 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characterization of a He ion implantation-induced deep level existing in fully implanted p+n InP junctions isolated by He bombardment has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep level transient spectroscopy (DLTS). Several emission characteristics of this trap were derived by the correlation between DLTS and capacitance–voltage transient technique. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369388
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication (1999)
    Springer
    Journal of materials science 10 (1999), S. 373-377 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride SiN x H) thin films by the electron cyclotron resonance method. In this work, we show that interfacial state density can be diminished without degrading electrical insulator properties by fabricating MIS structures based on a bi-layered insulator with different insulator compositions and different thickness. The effect of rapid thermal annealing treatment has been analysed in detail in these samples. An interface state density as low as 3 × 1011cm−2eV−1 was measured in some structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008949507676
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions (1999)
    Springer
    Journal of materials science 10 (1999), S. 413-418 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper, the deep levels existing in fully implanted and rapid thermal annealed p+n junctions obtained by Mg/Si or Mg/P/Si implantations on nominally undoped n-type InP substrates were detected and characterized by the correlation of two electrical techniques: deep level transient spectroscopy (DLTS) and capacitance–voltage transient technique (CVTT). Two ion implantation-induced deep levels (at 0.25 and 0.27 eV below the conduction band) were detected by DLTS. Several characteristics of these traps were derived from CVTT measurements, paying special attention to their physical nature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008913927240
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  • 10
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    Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures (1997)
    American Institute of Physics
    Details
    Publication Date: 1997-08-11
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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