Electronic Resource
Springer
Optics and spectroscopy
88 (2000), S. 390-396
ISSN:
1562-6911
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Within the framework of the simplest model of a material with semiconductor spherical quantum dots, taking no account of excitonic effect, calculations are made of the magnitude and dispersion of the cubic susceptibility χ(3) in the frequency region found far from the fundamental-absorption edge. Moreover, the dependence of χ(3) on the field strength E of a strong electromagnetic wave is studied. This dependence is rather well pronounced for E〉106 V/cm. It is shown that a substantial contribution to χ(3) is made by a large number of discrete states into which the valence and conduction bands are split in the presence of three-dimensional confinement. If the light frequency is close to resonance with the transition between sublevels of size quantization of one of the bands, χ(3) sharply increases. Under conditions where quantum dots occupy less than 0.1% of the total volume of a material, the nonlinear susceptibility may reach values of the order of ∼10−7 CGS electrostatic units for the band gap of the dot material E g ≃ 3 eV, and it increases as E g −4 with decreasing E g .
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.626808
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