Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 1931-1936
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have performed conductance deep-level transient spectroscopy experiments on planar gate structure GaAs MESFETs (metal-semiconductor field-effect transistors) using positive and negative filling pulses and, in some cases, under light exposure. We present a simple surface model which accurately describes the main features of the experimental data. We discuss the differences between the predictions of the model and the experimental results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338040
Permalink
|
Location |
Call Number |
Expected |
Availability |