ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The photocapacitance effect was theoretically studied in the case of optical ionization of impurity atoms in a monopolar MIS capacitor at low temperatures. Analytical expressions were derived for capacitance-voltage and photocapacitance-voltage characteristics of the MIS capacitor with a p-type semiconductor electrode. The dependence of photocapacitance sensitivity on bias was shown to exhibit a relatively narrow peak whose height and position depend on donor concentration. Capacitance and photocapacitance characteristics were calculated for the MIS capacitor with an indium-doped silicon electrode.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188025
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