Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 3298-3301
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Conductance between ion-implanted, coplanar n and p contacts on nominally undoped semi-insulating (SI) GaAs has been studied. The data reveal a time-dependent double-injection-induced conductance in the SI region between the contacts and an exponential current versus voltage junction conductance. To interpret the data a two-dimensional model is proposed in which current flows in a thin p-like layer near the surface, the conductance of which is modulated by transverse charge separation and consequent electron trapping.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336880
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