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  • 1
    Electronic Resource
    Electronic Resource
    Substrate effect on the transport properties of semiconducting films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1621-1626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, transport properties of InP/Si heteroepitaxial layers were investigated. Current-voltage characteristics, measured across the heterointerface, revealed diode behavior at 300 K only with Si of p-type conductivity. With n-type Si, a transition from Ohmic behavior at 300 K to a diode characteristic at low temperatures was observed at 250 K. Due to the efficient electrical isolation of layer and p-type substrate van der Pauw measurements with InP/p-Si could be analyzed in the conventional manner. For InP/n-type Si the applicability of the two-layer conduction model suggested by Petritz could be demonstrated for 300 K measurements. With decreasing temperature a pronounced deviation from the model occurred due to the increased effect of the heterointerface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358917
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  • 2
    Electronic Resource
    Electronic Resource
    Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4705-4712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentration and mobility of unintentionally doped InP layers, grown directly on Si using metal-organic vapor-phase epitaxy, have been studied. The formation of antiphase domains (APDs) was found to depend on annealing of the Si substrate in an AsH3 flow prior to epitaxial growth. Dislocation densities determined by the wet chemical delineation technique were (8±1)×107 cm−3, seemingly uncorrelated to APDs in the layers. In addition to a shallow donor and a compensating acceptor, a deep donor was observed affecting the temperature dependence of the free-electron concentration between 77 and 300 K. The electron mobility in this temperature range could be described in terms of the scattering mechanisms which are dominant in homoepitaxial InP, namely, scattering due to polar optical phonons, to ionized impurities, and to space charges. Electron scattering due to either of these mechanisms was strongly influenced by the occurrence of antiphase boundaries (APBs). The space-charge density as well as the degree of compensation of the epitaxial layers increases with the density of APBs. Degraded 300 K mobilities were obtained indicating the effect of local stress at the APB.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358445
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  • 3
    Electronic Resource
    Electronic Resource
    The distribution of charge concentration in InP/Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 224-228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of the charge concentration of InP layers grown on Si substrates by metalorganic vapor-phase epitaxy was investigated. The concentration near the surface and within the bulk of the layer was found to be governed by Si doping out of the ambient gas. Diffusion of Si across the heterointerface which may be partially assisted by dislocations is dominant in a region near the InP/Si interface. In the vicinity of the heterointerface the charge concentration in the InP layer is determined by strong compensation, which is attributed to defects caused by the mismatch of lattice parameter and thermal-expansion coefficient of InP and Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360655
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9273-9277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption of heteroepitaxial InP and GaAs layers grown on exactly [001]-oriented Si substrates was investigated by spectroscopic ellipsometry combined with anodic stripping. In the wavelength range above the band-gap-equivalent wavelength considerable absorption was found which depends on the dislocation density in the layer. A theoretical model based on the electric microfield of charged dislocations was developed which agrees closely with the experimental results. After calibration differential spectroscopic ellipsometry was used to determine the dislocation-density profile in the InP and GaAs layers. Thus, the dislocation density could be determined in the region of a few tens of nm to the heterointerface of InP on Si where the identification and counting of dislocations is impossible by other methods. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362577
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of dislocations on the transport properties of III/V-compound semiconductors on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6141-6146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of InP and GaAs epitaxial layers grown on exactly (001)-oriented Si substrates were investigated by temperature-dependent van der Pauw measurements combined with anodic stripping. Electron concentrations n at T=300 K decreasing from around 1018 cm−3 at the heterointerface to a constant level of 1016 cm−3 toward the surface agree well with the concentration profile of Si donors. Their activation energy is 2.9 and 1.3 meV in InP/Si and GaAs/Si, respectively. At low temperatures a marked decrease of the electron mobility μ at the heterointerface occurred. A quantitative analysis of μ (T) led to the model of charged dislocations as scattering centers. By comparison with the dislocation densities of 2×108 and 1×108 cm−2 in the vicinity of the surface of 2- and 3-μm-thick layers found by wet chemical etching we derived the occupation probability of the charged centers along the dislocation lines as 0.2 and 1.0 for InP and GaAs, respectively. At 300 K μ was almost unaffected by dislocation scattering and values of 3600 cm2/(V s) (InP) and 3800 cm2/(V s) (GaAs) for n of 2×1016 and 8×1016 cm−3 were obtained which are close to the values found with homoepitaxial layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360557
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  • 6
    Electronic Resource
    Electronic Resource
    A procedure for temperature-dependent, differential van der Pauw measurements (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4271-4276 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A two-step procedure is presented for temperature-dependent carrier-concentration and mobility profiling of InP and GaAs epitaxially grown on Si. Carrier concentrations and mobilities are determined by the van der Pauw technique between 14 and 300 K using a refrigerator-cooled cryostat. Anodic oxidation and oxide stripping by chemical etching were selected for the subsequent removal of controlled thin sublayers. By the combination of differential and temperature-dependent van der Pauw measurements, mobilities and carrier concentrations in dependence on depth and temperature have been extracted whereby the carrier-concentration profile at room temperature agrees very well with the results obtained by the electrochemical C/V technique. For InP/Si at a distance of more than 0.7 μm away from the heterointerface, the dependence of the carrier mobility on the concentration at room temperature is essentially the same as for InP/InP layers. At low temperatures, e.g., 77 K, scattering by dislocations results in a mobility reduction in InP/Si and GaAs/Si with respect to homoepitaxy. Due to the nonuniform distribution of impurities and dislocations the temperature dependences of carrier concentration and mobility vary considerably with depth, thus strongly recommending the use of the differential technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145381
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  • 7
    Electronic Resource
    Electronic Resource
    A new maskless selective-growth process for InP on (100) Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4366-4368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new selective-growth process of InP on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. In this process, the InP epitaxial layer was deposited on a photolithographically patterned InP-buffer film without an additional dielectric mask during the growth. Under our experimental conditions, the InP growth has a very high selectivity and the InP epitaxial layer is antiphase-domain free. Experimental results show that the undesirable sidewall-growth interaction in conventional dielectric mask selective-growth processes is effectively suppressed. Spatially resolved photoluminescence displayed very high optical quality of patterned InP layers compared to those grown on blanket substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352201
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  • 8
    Electronic Resource
    Electronic Resource
    Delta-doped InGaP grown by low pressure metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1731-1733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-delta-doped In0.49Ga0.51P layers were grown at 560 °C, 640 °C, and 720 °C by low pressure metalorganic chemical vapor deposition. For the growth temperature 560 °C, the electron sheet concentration saturated at 5.9×1012 cm−2, which corresponds to a three-dimensional (3D) concentration of 1.5×1019 cm−3. The sheet concentration increases by factor 3.5 and even by factor 11 for growth temperatures 640 °C and 720 °C, respectively. The widths of doping profiles were less than 6 nm, indicating a strong carrier confinement in the V-shaped quantum well. Electron mobility in samples grown at 560 °C indicates the presence of acceptor impurities at a high density. In InGaP grown at 640 °C, compensation effects of background acceptors do not occur resulting in extremely sharp profiles with a full width at half-maximum of 1.9 nm and a peak concentration of 2.1×1019 cm−3. The highest electron sheet concentrations were obtained in samples grown at 720 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118012
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  • 9
    Electronic Resource
    Electronic Resource
    Zn-doped InGaAsP (1.3 μm) contact layer for an inverted DH laser structure
    Amsterdam : Elsevier
    Journal of Crystal Growth 125 (1992), S. 465-476 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(92)90286-R
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  • 10
    Electronic Resource
    Electronic Resource
    Metastable phases formed by ion beam mixing of binary metal systems with positive heats of formation
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 34 (1988), S. 173-180 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0168-583X(88)90741-0
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