Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
63 (1993), S. 518-520
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Exposure of Si1−xGex(111) to ultraviolet light in air at room temperature is shown, using angle-resolved x-ray photoelectron spectroscopy and preferential etching, to lead to the formation of a two-phase oxide consisting of SiO2 and GeO2. Segregation of Ge was not observed at either the alloy/oxide or oxide/vapor interface. The oxidation rate was found to increase with increasing Ge content in the alloy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109991
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