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  • 1
    Electronic Resource
    Electronic Resource
    The impact of various annealing methods on silicon implant activation properties for GaAs crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 137-140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wafers obtained from undoped, semi-insulating GaAs crystals grown by liquid-encapsulated Czochralski and vertical gradient freeze techniques were implanted with 29Si at a dose of 3×1012 ions/cm2 and an energy of 60 keV. Activation of the implanted region was carried out by furnace or rapid thermal annealing methods, with and without the use of an SiO2 encapsulant. Profiles of the electron concentration and distribution were obtained by the capacitance-voltage method. Significant variations in the donor distributions were found to be dependent upon the annealing technique employed. The dissimilarities in implant activation properties for GaAs wafers grown by the two techniques, and subjected to identical annealing cycles, have been attributed to variations in melt stoichiometry and native point defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343892
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  • 2
    Electronic Resource
    Electronic Resource
    The role of crystal-growth properties on silicon implant activation processes for GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1464-1467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystal properties such as bulk resistivity, mobility, and dislocation density which influence ion-implantation activation are reported for liquid-encapsulated Czochralski, horizontal gradient freeze, and vertical gradient freeze semi-insulating GaAs crystals. The liquid-encapsulated Czochralski crystals used in this study include as-grown, boule-annealed, and indium-alloyed GaAs. Wafer maps displaying the concentration and spatial distribution of neutral EL2 are presented for each crystal. Wafers from the various crystals were implanted with 29Si at a dose of 3×1012 ions/cm2 and an energy of 60 keV. Macroscopic variations in the donor distribution and peak carrier density demonstrate that point defects impact significantly the donor implant activation processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341818
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  • 3
    Electronic Resource
    Electronic Resource
    Surface polygonization on GaAs wafers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1468-1471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polygonized surface structure produced by furnace annealing GaAs wafers was studied by optical and scanning electron microscopy. The surface structure was revealed by chemically etching wafers which had been implanted with silicon and subjected to a furnace annealing cycle. Cathodoluminescence micrographs demonstrate an absence of impurity segregation to the polygon boundaries. No correlation was found between growth-induced dislocations and the polygonal networks. It is proposed that the surface structure results from a vacancy-condensation process. Related surface effects were observed for rapidly annealed wafers. A correlation between the furnace annealed and rapidly annealed GaAs is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341819
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4176-4180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantations of silicon and silicon fluoride ions into semi-insulating GaAs wafers were performed to compare and evaluate the quality of the n-type layers that were produced. The use of SiFx (x=1,2,3) molecular ion implantations creates n-type active regions and n+ ohmic contact layers employing a higher implant energy than that needed to achieve a similar projected range for silicon ions. The higher energy allows the implanter to operate with a more stable and reproducible ion beam for shallow implant applications. Variables affecting the net electrically active ion distributions, such as the ion beam incidence angle, and the use of furnace or rapid thermal annealing cycles for implantation activation are addressed. Capacitance-voltage profiles were obtained for the n-type regions, and the free carrier distributions for the n+ implantations were obtained by polaron electrolytic profiling. The implanted regions were characterized by Hall-effect measurements, cathodoluminescence, and secondary ion mass spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344002
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  • 5
    Electronic Resource
    Electronic Resource
    EL2 distributions in vertical gradient freeze GaAs crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5689-5693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spatial distributions of EL2 in undoped, semi-insulating GaAs crystals grown by a novel vertical gradient freeze (VGF) method are reported. As a result of the low-temperature gradients present during growth and post-solidification cooling, these crystals exhibit lower EL2 concentrations and lower dislocation densities than liquid-encapsulated Czochralski crystals. Both the EL2 distribution and dislocation density over the area of a wafer do not display the fourfold symmetric pattern prevalent for LEC-grown GaAs. The radial distributions of EL2 in as-grown VGF crystals have been found to be independent of the dislocation density. Axial and radial Hall-effect measurements are included. Thermal activation energies are also presented and the compensation mechanism for this material is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340304
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  • 6
    Electronic Resource
    Electronic Resource
    Organic-on-GaAs contact barrier diodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 867-870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the organic compound 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) were deposited on n- and p-type GaAs substrates, and were found to form high contact barriers. Barrier energies of 0.64 eV on n-type substrates and 0.75 eV on p-type material yielded organic-on-inorganic (OI) contact barrier diodes characterized by exponentially increasing forward current with voltage, and a reverse dark current leakage limited by generation and recombination of carriers in the GaAs bulk. The Fermi level does not appear to be pinned at the OI interface, contrary to what is commonly observed in metal/GaAs Schottky barrier diodes. In addition, we have made OI contact barriers using N,N'-dimethyl 3,4,9,10-perylenetetracarboxylic diimide (DIME-PTCDI) deposited on n- and p-type GaAs. These devices have contact barriers of 0.85 eV for substrates of either majority-carrier-type. The n values obtained from the forward biased characteristics of the GaAs/DIME-PTCDI structures are n=1.19, and are the lowest obtained to date for OI devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336157
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  • 7
    Electronic Resource
    Electronic Resource
    Control of sidegating effects in AlGaAs/GaAs heterostructure field-effect transistors by modification of GaAs wafer surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 169-175 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sidegating characteristics of AlGaAs/GaAs heterostructure field-effect transistors, fabricated on molecular-beam epitaxially grown layers, were investigated with emphasis on the material properties. A systematic analyses of the epitaxial layers concluded with the identification of the substrate–superlattice-buffer-layer interface as the predominant cause of the sidegating effect. Remnant carbon contamination on the GaAs surface was found to produce a p-type, conducting interfacial region. Controlled oxidation of the carbon on the wafers was accomplished using ultraviolet radiation. This oxide was desorbed in situ before epitaxial growth. Secondary-ion-mass spectroscopy was employed to estimate the carbon concentration at the substrate–epitaxial-layer interface for standard cleaned and ultraviolet-ozone-treated wafers. The carbon concentration of the interfacial region decreased by two orders of magnitude for the wafers exposed to the ultraviolet radiation. Hall-effect measurements of standard cleaned and ultraviolet-ozone-treated heterostructure wafers, prepared with various buffer layer thicknesses, demonstrated the dominant influence of the interfacial p-type region on the electronic properties of the material. A comparison of sidegating characteristics for devices fabricated on the two types of wafers is presented and discussed. A dramatic improvement in sidegating was observed for the wafers subjected to the ultraviolet-ozone cleaning procedure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347110
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  • 8
    Electronic Resource
    Electronic Resource
    Donor identification in bulk gallium arsenide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 389-391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report identification, by a spectroscopic method, of shallow donors in both epitaxial and bulk gallium arsenide. Identification is achieved using photoluminescence from resonantly excited two-electron satellites of donor bound exciton lines at 4.2 K in a magnetic field of 9.5 T. Sulfur and a previously unreported lower binding energy donor dominate in liquid-encapsulated Czochralski-grown crystals, while S and Si are dominant in the Bridgman-grown material. Central cell structure is resolved in the (D0,X) lines in a high magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99475
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  • 9
    Electronic Resource
    Electronic Resource
    Changes in the electronic properties of bulk GaAs by thermal annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1472-1474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk GaAs grown by the Bridgman technique changes its electronic properties in response to heat treatment. These changes were studied by deep level transient spectroscopy, photoluminescence, and Hall effect measurements. We report the dependence of the conductivity changes on starting material composition, annealing temperature, and annealing duration. The changes are related to the stability of a shallow acceptor which is present in concentrations ≥1016 cm−3 and reflect the equilibration of native defects introduced during the crystal growth process. The implication of this study is that as-grown GaAs is a metastable material with its ultimate electrical properties being determined by process conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99102
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  • 10
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposition of epitaxial mercury telluride (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of mercury telluride were deposited onto cadmium telluride substrates at 85 °C using a glow discharge to enhance the reaction between dimethylmercury and dimethyltelluride. Hall-effect measurements showed the material to be n type with room-temperature and 77 K carrier concentrations of 5.0×1017 and 1.0×1017 cm−3, respectively: room-temperature Hall mobility was 22 000 cm2/V s and 77 K mobility was 52 000 cm2/V s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98508
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