ISSN:
1573-4854
Keywords:
AC impedance
;
porous silicon
;
residual moisture
;
aging effects
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The present work aims to study the AC impedance of porous silicon films left in the contact with the anodizing bath after their growth is over. It is shown that the layers grown at p-type silicon experience noticeable changes of their impedance behavior resulting in the gradual growth of electrical resistance of the p-PS layer. This change is assumed to be related with the deposition of a passive layer at the pore bottoms associated with reabsorption of dissolved Si-containing material from the electrolyte. The layers formed at n-Si also show changes of the electrical impedance, although they are much more complicated than in the previous case (dependence of the kinetics of changes on the polarization current and polarization time, presence of the inductive loops at the impedance spectra, etc.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009619415893
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