Publication Date:
2016-02-24
Description:
We report the growth of Ba 1− x La x SnO 3 ( x = 0.00, 0.005, 0.01, 0.02, and 0.04) thin films on the insulating BaSnO 3 (001) substrate by pulsed laser deposition. The insulating BaSnO 3 substrates were grown by the Cu 2 O-CuO flux, in which the molar fraction of KClO 4 was systematically increased to reduce electron carriers and thus induce a doping induced metal-insulator transition, exhibiting a resistivity increase from ∼10 −3 to ∼10 12 Ω cm at room temperature. We find that all the Ba 1− x La x SnO 3 films are epitaxial, showing good in-plane lattice matching with the substrate as confirmed by X-ray reciprocal space mappings and transmission electron microscopy studies. The Ba 1− x La x SnO 3 ( x = 0.005–0.04) films showed degenerate semiconducting behavior, and the electron mobility at room temperature reached 100 and 85 cm 2 V −1 s −1 at doping levels 1.3 × 10 20 and 6.8 × 10 19 cm −3 , respectively. This work demonstrates that thin perovskite stannate films of high quality can be grown on the BaSnO 3 (001) substrates for potential applications in transparent electronic devices.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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