Publication Date:
2015-02-26
Description:
We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO 3 and LaInO 3 . We have developed epitaxial LaInO 3 as the gate oxide on top of BaSnO 3 , which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO 3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO 3 as a gate dielectric and the La-doped BaSnO 3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm 2 V −1 s −1 , the on/off ratio was larger than 10 7 , and the subthreshold swing was 0.65 V dec −1 . We discuss the possible origins for such device performance and the future directions for further improvement.
Electronic ISSN:
2166-532X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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