Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 334-336
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
HfO2 thin films were deposited on Si wafers using an atomic layer deposition technique at temperatures ranging from 200 to 400 °C with HfCl4 as the precursor and H2O as the oxidant. The time-dependent interfacial-layer growth behavior was dependent on the deposition temperature. The interfacial layer grew with increasing deposition time at 200 °C. However, the film thicknesses decreased with increasing deposition time after reaching a certain maximum value at 300 and 400 °C due to the enhanced dissolution of SiOx into the growing films at these temperatures. Post-annealing at 800 °C under a N2 atmosphere resulted in the precipitation of a Si-rich interfacial layer even for the initially interfacial layer free films. This had the effect of reducing the capacitance density of the films. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1492320
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