ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
Collection
Language
  • 1
    Publication Date: 2023-05-12
    Keywords: Conductivity, average; ELEVATION; Heat flow; LATITUDE; LONGITUDE; Method comment; Number; Sample, optional label/labor no; Temperature gradient
    Type: Dataset
    Format: text/tab-separated-values, 48 data points
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Publication Date: 2021-05-19
    Description: Argentine hake Merluccius hubbsi represents nowadays the main fishery resource of the Argentine Sea, in spite of the fact that the percentage of captures related to total fishery production has fallen down 30% in the last decade. The abundance and distribution of hake eggs and larvae in an intense spawning area in front of Isla Escondida (Chubut province), are analyzed. This phenomena was studied from a comparative-historical point of view allowing to apppreciate the evolution of a resource at present undergoing an overfishing pressure, capable of pushing it to collapse. Since 1973 maximum egg densities diminished and, if total egg production is considered a reliable index for recruitment prediction, no signs of overcoming stocks can be seen. On the other hand, there are records of a shifting eastwards of the 50m isobath in the major spawning area throughout the years, together with a shrinking of the spawning depth-ranges during 1986 and 1999. Even though with the analyzed data it was not possible to confirm the hypothesis that states a major incidence of spawning events during a particular time range, other techniques and sampling designs useful for future research, are discussed.
    Description: Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales.
    Description: Seminario Curso de Oceanograf¡a Biológica (INIDEP, Mar del Plata).
    Description: Unpublished
    Description: larvas de peces, huevos de peces, abundancia, desove, Merluccidae, Merluccius hubbsi, merluza
    Keywords: Spawning ; Fish larvae ; Fish larvae ; Fish eggs ; Abundance ; Spawning
    Repository Name: AquaDocs
    Type: Theses and Dissertations , Bachelor thesis
    Format: 1353882 bytes
    Format: application/pdf
    Format: 33
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Publication Date: 2016-03-18
    Description: Adipogenic placenta-derived mesenchymal stem cells are not lineage restricted by withdrawing extrinsic factors: developing a novel visual angle in stem cell biology Cell Death and Disease 7, e2141 (March 2016). doi:10.1038/cddis.2016.1 Authors: C Hu, H Cao, X Pan, J Li, J He, Q Pan, J Xin, X Yu, J Li, Y Wang, D Zhu & L Li
    Electronic ISSN: 2041-4889
    Topics: Biology , Medicine
    Published by Springer Nature
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 4029-4030 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An extended application of the magnetron sputtering discharge is described. The discharge, called a magnetically confined discharge in the experiments, is pumped in a pulse mode to produce and excite copper vapor atoms for laser operation. Copper atom densities adequate for laser action (∼1014 cm−3) are obtained in the discharge at temperatures below 400 K. Laser operation is expected in the experimental apparatus with fast-rise pulse pumping. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6655-6660 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Angle-resolved x-ray photoelectron spectroscopy (ARXPS) has been used to study the Ar incorporation and surface compositional changes in InP(100) after 1–5 keV Ar+ bombardment at various ion fluences. The ARXPS measurements showed that the incorporated Ar concentration achieved saturation at ion bombardment fluences of 〉1016 cm−2. The surface Ar concentration decreased with increasing bombardment energy. No Ar bubbles were observed by atomic force microscopy, suggesting that Ar bubble formation was not the main Ar trapping mechanism. The altered layers were, on average, In rich up to the sampling depth of the ARXPS technique. However, the altered layers were inhomogeneous as a function of depth and appeared more In rich at the surface than in the subsurface region. The results are compared with those obtained by other authors and discussed in the context of preferential sputtering, radiation-enhanced diffusion and segregation, and Ar incorporation. Although the altered layers were In rich, a P-rich phase induced by Ar+ bombardment was identified in the altered layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of Al Schottky diodes on n-type InxAl1−xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 442-445 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of In0.52(AlxGa1−x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310–1700 nm. The refractive indexes were determined and could be given as n(x)=0.12x2–0.51x+3.6 at the wavelength of 1.55 μm. The measured thickness of the epilayers agrees within 5.2% of the nominal thickness. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between the results and the reported data is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8367-8370 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual strain, crystallographic tilt, and surface topography of InxGa1−xAs and InxAl1−xAs (0〈x〈0.3) epilayers grown on GaAs substrates are investigated. The residual strain of the InxAl1−xAs grown on graded InyAl1−yAs is shown to be strongly dependent on the thickness of the underlying-graded buffer layers and is larger than that of the InGaAs of the same structure. The crystallographic tilt of the InGaAs epilayers with respect to GaAs substrate is found to be strongly dependent on the growth temperature as well as the layer structure of the underlying buffer layer, while that of InAlAs is insensitive to these two factors. This behavior is attributed to the different roughness of the growth front between these two material systems and is consistent with the observation by atomic force microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8397-8400 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The total energy and electronic structure of the hcp Ni76Ta25 metastable phase have been obtained by the self-consistent discrete variational method and the local Xα exchange approximation. The total energy of this phase was calculated as a function of lattice constant, a, for a fixed c/a of 1.63, which is determined experimentally. The predicted lattice constant, i.e., a=4.93 a.u. is very close to the experimental value of a=4.97 a.u. In addition, the density of states and bonding charge density were used to clarify the characteristics of bonding in this metastable crystalline phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 572-574 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured capacitance-time (C-t) transients on n-type 6H-SiC MOS capacitors to obtain information on the generation lifetime near the SiO2/SiC interface. At temperatures between 260 and 370 °C, the capacitance recovery transient is thermally activated with an activation energy of about 2.0 eV. Because of the wide band gap of SiC, these transients are extremely long. As a figure of merit, extrapolation of the high-temperature C-t data indicates a room-temperature recovery time of over 1010 yr. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...