ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The growth ofγ-alumina on crystallographically distinct aluminium substrates has been studied using transmission electron microscopy and diffraction and Rutherford backscattering. Oxides grown thermally on single-crystal substrates showed a preferred epitactic orientation relationship with the substrate, while oxides grown by the same technique on polycrystalline substrates did not exhibit a preferred orientation relationship. The grain size of the oxide was found to be at least one order of magnitude smaller than the initial grain size of the polycrystalline aluminium substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01107436
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